DatasheetsPDF.com

DMG563H1 Dataheets PDF



Part Number DMG563H1
Manufacturers Panasonic
Logo Panasonic
Description Transistor
Datasheet DMG563H1 DatasheetDMG563H1 Datasheet (PDF)

DMG563H1 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits  Features  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: T1  Basic Part Number DRC2144E + DRA2143X (Collector-base connection)  Packaging DMG563H10R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rati.

  DMG563H1   DMG563H1


Document
DMG563H1 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits  Features  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: T1  Basic Part Number DRC2144E + DRA2143X (Collector-base connection)  Packaging DMG563H10R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Tr1 Collector-emitter voltage (Base open) Collector current Collector-base voltage (Emitter open) Tr2 Collector-emitter voltage (Base open) Collector current Total power dissipation Overall Junction temperature Storage temperature VCBO VCEO IC VCBO VCEO IC PT Tj Tstg 50 50 100 –50 –50 –100 150 150 –55 to +150 Unit V V mA V V mA mW °C °C Unit: mm 1: Emitter (Tr1) 2: Base (Tr1) 3: Emitter (Tr2) Panasonic JEITA Code 4: Collecter (Tr2) 5: Base (Tr2) Collecter (Tr1) SMini5-F3-B SC-113CB SOT-353 (B2, C1) 5 (C2) 4 R1 Tr1 Tr2 R2 R1 R2 123 (E1) (B1) (E2) Tr1 R1 Resistance R2 value Tr2 R1 R2 47 47 4.7 10 kΩ kΩ kΩ kΩ Publication date: February 2013 Ver. BED 1 DMG563H1  Electrical Characteristics Ta = 25°C±3°C  Tr1 Parameter Symbol Conditions Min Typ Max Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.1 Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 80 Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA 0.25 Input voltage (ON) VI(on) VCE = 0.2 V, IC = 5 mA 3.6 Input voltage (OFF) VI(off) VCE = 5 V, IC = 100 µA 0.8 Input resistance R1 –30% 47 +30% Resistance ratio R1 / R2 0.8 1.0 1.2 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  Tr2 Parameter Symbol Conditions Min Typ Max Collector-base voltage (Emitter open) VCBO IC = –10 µA, IE = 0 –50 Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 Collector-base cutoff current (Emitter open) ICBO VCB = –50 V, IE = 0 – 0.1 Collector-emitter cutoff current (Base open) ICEO VCE = –50 V, IB = 0 – 0.5 Emitter-base cutoff current (Collector open) IEBO VEB = –6 V, IC = 0 –1.0 Forward current transfer ratio hFE VCE = –10 V, IC = –5 mA 30 Collector-emitter saturation voltage VCE(sat) IC = –10 mA, IB = – 0.5 mA – 0.25 Input voltage (ON) VI(on) VCE = – 0.2 V, IC = –5 mA –1.7 Input voltage (OFF) VI(off) VCE = –5 V, IC = –100 µA – 0.6 Input resistance R1 –30% 4.7 +30% Resistance ratio R1 / R2 0.37 0.47 0.57 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Unit V V µA µA mA  V V V kΩ  Unit V V µA µA mA  V V V kΩ  Ver. BED 2 Total power dissipation PT (mW) DMG563H1 Common characDtMerGis5ti6c3sHc1h_PaTrt-Ta PT  Ta 200 150 100 50 0 0 40 80 120 160 200 Ambient temperature Ta (°C) Output current IO (mA) Collector current IC (mA) CharacterisDticMsGc5h6a3Hrts1(oTfr1T)r_1IC-VCE IC  VCE 120 Ta = 25°C 100 IB = 500 µA 450 µA 400 µA 350 µA 80 300 µA 250 µA 60 200 µA 150 µA 40 100 µA 20 50 µA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) DMG563H1(Tr1)_IO-VIN IO  VIN 10 VO = 5 V 1 Ta = 85°C 25°C 10−1 10−2 −30°C Input voltage VIN (V) Forward current transfer ratio hFE DMG563H1(Tr1)_hFE-IC hFE  IC 500 VCE = 10 V 400 Ta = 85°C 300 25°C 200 −30°C 100 0 0.1 1 10 100 Collector current IC (mA) DMG563H1(Tr1)_VIN-IO VIN  IO 100 VO = 0.2 V Collector-emitter saturation voltage VCE(sat) (V) DMG563H1(Tr1)_VCEsat-IC VCE(sat)  IC 10 IC / IB = 20 1 0.1 Ta = 85°C −30°C 25°C 0.01 0.1 1 10 100 Collector current IC (mA) 10 Ta = −30°C 25°C 85°C 1 10−30 0.5 1.0 1.5 Input voltage VIN (V) 2.0 0.1 0.1 1 10 Output current IO (mA) 100 Ver. BED 3 DMG563H1 CharacterisDticMsGc5h6a3Hrts1(oTfr2T)r_2IC-VCE IC  VCE −120 −100 Ta = 25°C IB = −800 µA −700 µA −600 µA −80 −500 µA Collector current IC (mA) −400 µA −60 −300 µA −40 −200 µA −20 −100 µA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) DMG563H1(Tr2)_IO-VIN IO  VIN −10 VO = −5 V −1 Ta = 85°C Output current IO (mA) −10−1 25°C −10−2 −30°C Input voltage VIN (V) Forward current transfer ratio hFE DMG563H1(Tr2)_hFE-IC hFE  IC 300 VCE = −10 V 250 200 Ta = 85°C 150 25°C 100 −30°C 50 0 − 0.1 −1 −10 −100 Collector current IC (mA) DMG563H1(Tr2)_VIN-IO VIN  IO −100 VO = − 0.2 V Collector-emitter saturation voltage VCE(sat) (V) DMG563H1(Tr2)_VCEsat-IC VCE(sat)  IC −10 IC / IB = 20 −1 − 0.1 Ta = 85°C −30°C 25°C − 0.01 − 0.1 −1 −10 −100 Collector current IC (mA) −10 25°C Ta = −30°C −1 85°C −10−30 − 0.5 −1.0 −1.5 Input voltage VI.


DMG5802LFX DMG563H1 DMG6301UDW


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)