Document
DMG563H1
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
For digital circuits
Features Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: T1
Basic Part Number DRC2144E + DRA2143X (Collector-base connection)
Packaging DMG563H10R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open) Tr1 Collector-emitter voltage (Base open)
Collector current Collector-base voltage (Emitter open) Tr2 Collector-emitter voltage (Base open) Collector current Total power dissipation Overall Junction temperature Storage temperature
VCBO VCEO
IC VCBO VCEO
IC PT Tj Tstg
50 50 100 –50 –50 –100 150 150 –55 to +150
Unit V V mA V V mA mW °C °C
Unit: mm
1: Emitter (Tr1) 2: Base (Tr1) 3: Emitter (Tr2)
Panasonic JEITA Code
4: Collecter (Tr2) 5: Base (Tr2)
Collecter (Tr1) SMini5-F3-B SC-113CB SOT-353
(B2, C1) 5
(C2) 4
R1 Tr1 Tr2
R2 R1 R2
123 (E1) (B1) (E2)
Tr1 R1
Resistance
R2
value
Tr2 R1 R2
47 47 4.7 10
kΩ kΩ kΩ kΩ
Publication date: February 2013
Ver. BED
1
DMG563H1
Electrical Characteristics Ta = 25°C±3°C Tr1
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
VCBO IC = 10 µA, IE = 0
50
Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0
50
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
0.5
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
0.1
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
80
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.5 mA
0.25
Input voltage (ON)
VI(on) VCE = 0.2 V, IC = 5 mA
3.6
Input voltage (OFF)
VI(off) VCE = 5 V, IC = 100 µA
0.8
Input resistance
R1
–30% 47 +30%
Resistance ratio
R1 / R2
0.8 1.0 1.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Tr2
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
VCBO IC = –10 µA, IE = 0
–50
Collector-emitter voltage (Base open)
VCEO IC = –2 mA, IB = 0
–50
Collector-base cutoff current (Emitter open) ICBO VCB = –50 V, IE = 0
– 0.1
Collector-emitter cutoff current (Base open) ICEO VCE = –50 V, IB = 0
– 0.5
Emitter-base cutoff current (Collector open) IEBO VEB = –6 V, IC = 0
–1.0
Forward current transfer ratio
hFE VCE = –10 V, IC = –5 mA
30
Collector-emitter saturation voltage
VCE(sat) IC = –10 mA, IB = – 0.5 mA
– 0.25
Input voltage (ON)
VI(on) VCE = – 0.2 V, IC = –5 mA
–1.7
Input voltage (OFF)
VI(off) VCE = –5 V, IC = –100 µA
– 0.6
Input resistance
R1
–30% 4.7 +30%
Resistance ratio
R1 / R2
0.37 0.47 0.57
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit V V µA µA mA V V V kΩ
Unit V V µA µA mA V V V kΩ
Ver. BED
2
Total power dissipation PT (mW)
DMG563H1
Common characDtMerGis5ti6c3sHc1h_PaTrt-Ta PT Ta
200
150
100
50
0 0 40 80 120 160 200 Ambient temperature Ta (°C)
Output current IO (mA)
Collector current IC (mA)
CharacterisDticMsGc5h6a3Hrts1(oTfr1T)r_1IC-VCE IC VCE
120 Ta = 25°C
100 IB = 500 µA 450 µA 400 µA 350 µA
80 300 µA 250 µA
60 200 µA 150 µA
40 100 µA
20 50 µA
0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V)
DMG563H1(Tr1)_IO-VIN
IO VIN
10 VO = 5 V
1 Ta = 85°C
25°C 10−1
10−2 −30°C
Input voltage VIN (V)
Forward current transfer ratio hFE
DMG563H1(Tr1)_hFE-IC
hFE IC
500 VCE = 10 V
400 Ta = 85°C
300 25°C
200 −30°C
100
0 0.1 1 10 100
Collector current IC (mA)
DMG563H1(Tr1)_VIN-IO
VIN IO
100 VO = 0.2 V
Collector-emitter saturation voltage VCE(sat) (V)
DMG563H1(Tr1)_VCEsat-IC
VCE(sat) IC
10 IC / IB = 20
1
0.1 Ta = 85°C −30°C 25°C
0.01 0.1 1 10 100 Collector current IC (mA)
10 Ta = −30°C
25°C 85°C
1
10−30
0.5 1.0 1.5 Input voltage VIN (V)
2.0
0.1 0.1
1 10 Output current IO (mA)
100
Ver. BED
3
DMG563H1
CharacterisDticMsGc5h6a3Hrts1(oTfr2T)r_2IC-VCE IC VCE
−120
−100
Ta = 25°C
IB = −800 µA −700 µA −600 µA
−80 −500 µA
Collector current IC (mA)
−400 µA −60
−300 µA
−40 −200 µA
−20 −100 µA
0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V)
DMG563H1(Tr2)_IO-VIN
IO VIN
−10 VO = −5 V
−1 Ta = 85°C
Output current IO (mA)
−10−1 25°C −10−2
−30°C
Input voltage VIN (V)
Forward current transfer ratio hFE
DMG563H1(Tr2)_hFE-IC
hFE IC
300 VCE = −10 V
250
200 Ta = 85°C
150 25°C
100 −30°C
50
0 − 0.1
−1
−10 −100
Collector current IC (mA)
DMG563H1(Tr2)_VIN-IO
VIN IO
−100 VO = − 0.2 V
Collector-emitter saturation voltage VCE(sat) (V)
DMG563H1(Tr2)_VCEsat-IC
VCE(sat) IC
−10 IC / IB = 20
−1
− 0.1 Ta = 85°C −30°C
25°C
− 0.01 − 0.1
−1
−10 −100
Collector current IC (mA)
−10
25°C Ta = −30°C −1
85°C
−10−30
− 0.5 −1.0 −1.5 Input voltage VI.