NOT RECOMMENDED FOR NEW DESIGN CONTACT US
DMG1026UV
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS...
NOT RECOMMENDED FOR NEW DESIGN CONTACT US
DMG1026UV
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) 1.8Ω @ VGS = 10V 2.1Ω @ VGS = 4.5V
ID TA = +25°C
440mA
410mA
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Features
Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ An automotive-compliant part is available under separate datasheet (DMG1026UVQ)
Applications
Mechanical Data
Battery operated systems and solid-state relays Drivers: relays, solenoids, lamps, hammers, displays, memories,
transistors, etc. DC-DC converters Power management functions
Package: SOT563 Package Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Weight: 0.006 grams (Approximate)
D1
D2
SOT563
S1 1
6 D1
G1 2
5 G2 G1
G2
ESD PROTECTED TO 2kV Top View
D2 3
4 S2...