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DMG1026UV

Diodes

DUAL N-CHANNEL MOSFET

NOT RECOMMENDED FOR NEW DESIGN CONTACT US DMG1026UV 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS...


Diodes

DMG1026UV

File Download Download DMG1026UV Datasheet


Description
NOT RECOMMENDED FOR NEW DESIGN CONTACT US DMG1026UV 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) 1.8Ω @ VGS = 10V 2.1Ω @ VGS = 4.5V ID TA = +25°C 440mA 410mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/  An automotive-compliant part is available under separate datasheet (DMG1026UVQ) Applications Mechanical Data  Battery operated systems and solid-state relays  Drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.  DC-DC converters  Power management functions  Package: SOT563  Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Terminal Connections: See Diagram Below  Weight: 0.006 grams (Approximate) D1 D2 SOT563 S1 1 6 D1 G1 2 5 G2 G1 G2 ESD PROTECTED TO 2kV Top View D2 3 4 S2...




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