V30DL50C-M3

www.vishay.com V30DL50C-M3, V30DL50CHM3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.29 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V30DL50C PIN 1 K PIN 2 HEATSINK FEATURES Trench MOS Schottky technology Very low profile - typical height of 1.7 mm Ideal for automated placement Low forward voltage drop, low power losses High efficiency operation AEC-Q101 qualified Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 50 V 300 A 0.42 V 150 °C TO-263AC (SMPD) Diode variations Dual common cathode MECHANICAL DATA Case: TO-263AC (SMPD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade  Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward...