www.vishay.com
V30DL50C-M3, V30DL50CHM3
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra ...
www.vishay.com
V30DL50C-M3, V30DL50CHM3
Vishay General Semiconductor
Dual Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.29 V at IF = 5 A
TMBS ® eSMP® Series TO-263AC (SMPD)
K
1
2 Top View
Bottom View
V30DL50C
PIN 1
K
PIN 2
HEATSINK
FEATURES Trench MOS
Schottky technology Very low profile - typical height of 1.7 mm Ideal for automated placement Low forward voltage drop, low power losses High efficiency operation AEC-Q101 qualified Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package
2 x 15 A 50 V 300 A 0.42 V
150 °C TO-263AC (SMPD)
Diode variations
Dual common cathode
MECHANICAL DATA
Case: TO-263AC (SMPD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward...