DatasheetsPDF.com

BAW101

LGE

High Voltage Double Diode

BAW101 High Voltage Double Diode FEATURES z High Switching Speed:Max.50ns. z High Continuous Reverse Voltage:300V. z El...



BAW101

LGE


Octopart Stock #: O-986015

Findchips Stock #: 986015-F

Web ViewView BAW101 Datasheet

File DownloadDownload BAW101 PDF File







Description
BAW101 High Voltage Double Diode FEATURES z High Switching Speed:Max.50ns. z High Continuous Reverse Voltage:300V. z Electrically Insulated Diodes. Pb Lead-free APPLICATIONS z General application. ORDERING INFORMATION Type No. Marking BAW101 AB SOT-143 Package Code SOT-143 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol Limits Repetitive Peak Reverse Voltage Series connection VRRM 300 600 Continuous Reverse Voltage Series connection VR 300 600 Continuous Forward Current single diodes(note1) double diodes(note1) IF 250 140 Unit V V mA Repetitive Peak Forward Current Non-repetitive Peak Forward Current t=1μs IFRM IFSM 625 4.5 mA A Power Dissipation(note1) Pd 350 mW Junction Temperature Tj -65 to +150 ℃ Storage Temperature TSTG 150 ℃ Operating Ambient Temperature Tamb -65 ℃ Note:1Device mounted on an FR4 Printed-circuit board,cathode-lead mountiong pad=1cm2. Http:www.luguang.cn E-mail:[email protected] BAW101 High Voltage Double Diode ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Characteristic Symbol Min Typ MAX UNIT Test Condition Reverse Breakdown Voltage V(BR)R 300 - - V IR= 100μA Forward Voltage VF - - 1.1 V IF=100mANote1 Reverse Leakage Current IR - - 150 nA VR=250V 50 μA VR=250V,Tj=150℃ Diodes Capacitance Cd --2 pF VR=0V,f=1.0MHz Reverse Recovery Time trr - - 50 ns IF=IR=30mA,RL=100Ω Irr=0.1*IR Note:1.Pulse tese:pulse width=300µs;δ=0.02 TYPICAL CHARACTERISTICS @ Ta=25...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)