BAW101

SMD Type Silicon Switching Diode Array BAW101 Features Electrically insulated high-voltage medium-speed diodes Diodes Unit: mm A bsolute M axim um R atings T a = 25 Param eter R everse voltage P eak reverse voltage Forward current Peak forward current Surge forward current, t = 1 s Total power dissipation, TS 35 Junction tem perature Storage tem perature range Junction - am bient1) Junction - soldering point N o te 1.Package m ounted on epoxy pcb 40 m m Sym bol VR VRM IF IFM IFS P tot Tj T stg R th JA R th JS V alue 300 300 250 500 4.5 350 150 -65 to +150 470 330 40 m m 1.5 m m /6 cm 2 Cu U nit V V mA mA A mW K /W K /W www.kexin.com.cn 1 SMD Type BAW101 Diodes Electrical Characteristics Ta = 25 Parameter Breakdown voltage Forward voltage Symbol VBR VF Reverse current IR Diode capacitance Cd Reverse recovery time trr Conditions I(BR) = 100 A IF = 100 mA VR = 250 V VR = 250 V, TA = 150 VR = 0 V, f = 1 MHz IF = 10 mA, IR = 10 mA, RL = 100 measured at IR = 1 mA Min Typ Max Unit 300 V 1.3 V 150 nA 50 A 6 pF 1 Marking Marking JPs 2 www.kexin.com.cn ...