N-Channel Super Trench Power MOSFET
http://www.ncepower.com
Pb Free Product
NCEP15T11T
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP15T11T ...
Description
http://www.ncepower.com
Pb Free Product
NCEP15T11T
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP15T11T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
General Features
● VDS =150V,ID =110A RDS(ON) <7.8mΩ @ VGS=10V
● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested
Application
● DC/DC Converter ● Ideal for high-frequency switching and synchronous
rectification
Schematic diagram
TO-247 top view
100% UIS TESTED! 100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCEP15T11T
NCEP15T11T
TO-247
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation
IDM PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
150 ±20 110 93 440 300
2 1296 -55 To 175
Unit
V V A A A W W/℃ mJ ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
Rθ...
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