N-Channel Super Junction Power MOSFET
NCE60R360D,NCE60R360,NCE60R360F
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use ...
Description
NCE60R360D,NCE60R360,NCE60R360F
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses ●small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant
TVDS@ jmax
RDS(ON)MAX
ID
650 360 11
V mΩ A
Application
● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60R360D
TO-263
NCE60R360D
NCE60R360
TO-220
NCE60R360
NCE60R360F
TO-220F
NCE60R360F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note2) Avalanche current(Note 1) Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
VDS VGS ID (DC) ID (DC) IDM (pluse) PD
EAS IAR
EAR
NCE60R360D NCE60R360F
NCE60R360
600 ±30 11 11* 7 7* 33 33* 121 32.7 0.97 0.26 280 5.5
0.5
Unit
V V A A A W W...
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