N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE0205I
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0205I ...
Description
http://www.ncepower.com
Pb Free Product
NCE0205I
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0205I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =200V,ID =5A RDS(ON) < 580mΩ @ VGS=10V
(Typ:520mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% ∆Vds TESTED!
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
0205
NCE0205I
TO-251
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
Limit
200 ±20
5 3.5 20 50 -55 To 175
Unit
V V A A A W ℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
http://www.ncepower.com
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdow...
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