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SPR50N03 Dataheets PDF



Part Number SPR50N03
Manufacturers SeCoS
Logo SeCoS
Description N-Channel Enhancement Mode Power MOSFET
Datasheet SPR50N03 DatasheetSPR50N03 Datasheet (PDF)

Elektronische Bauelemente SPR50N03 51A , 30V , RDS(ON) 9 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPR50N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. .

  SPR50N03   SPR50N03



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Elektronische Bauelemente SPR50N03 51A , 30V , RDS(ON) 9 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPR50N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. PR-8PP FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 50N03 = Date code PACKAGE INFORMATION Package MPQ PR-8PP 3K Leader Size 13 inch REF. A B C D E F Millimeter Min. Max. 4.9 5.1 5.7 5.9 5.95 6.2 1.27 BSC. 0.35 0.49 0.1 0.2 REF. G H I J K L Millimeter Min. Max. 0.8 1.0 0.254 Ref. 4.0 Ref. 3.4 Ref. 0.6 Ref. 1.4 Ref. SD SD SD GD ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current 1@VGS=10V TC=100°C TA=25°C Pulsed Drain Current 2 Single Pulse Avalanche Energy 3 TA=70°C VDS VGS ID IDM EAS 30 ±20 51 36 12 9.6 130 130 Avalanche Current Power Dissipation 4 TC=25°C IAS PD 34 46 Operating Junction & Storage Temperature TJ, TSTG -55~150 Thermal Resistance Rating Thermal Resistance Junction-Ambient1(Max). Thermal Resistance Junction-Case1(Max). RθJA RθJC 62 2.7 Unit V V A A A A A mJ A W °C °C / W °C / W http://www.SeCoSGmbH.com/ 20-May-2014 Rev.A Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SPR50N03 51A , 30V , RDS(ON) 9 mΩ N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID= 250uA Gate-Threshold Voltage VGS(th) 1 - 2.5 V VDS=VGS, ID=250uA Forward Tranconductance gfs - 42 - S VDS=5V, ID=30A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current - -1 VDS=24V, VGS=0, TJ=25°C IDSS uA - -5 VDS=24V, VGS=0, TJ=55°C Static Drain-Source On-Resistance 2 - -9 VGS=10V, ID=30A RDS(ON) mΩ - - 13.5 VGS=4.5V, ID=15A Gate Resistance Rg - 2.1 3.5 Ω f =1.0MHz Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf - 10.6 - 4.2 -4- 6.4 - 70.6 - 22.4 -8- ID=15A nC VDS=15V VGS=4.5V VDD=15V nS ID=15A VGS=10V RG=3.3Ω Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss - 1127 - VGS =0 Coss - 194 - pF VDS=15V Crss - 77 - f =1.0MHz Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 45 - - mJ VDD=25V, L=0.1mH, IAS=20A Diode Forward Voltage 2 Continuous Source Current 1,6 Pulsed Source Current 2,6 Source-Drain Diode VSD - - 1 V IS=1A, VGS=0V IS - - 51 A .


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