Document
Elektronische Bauelemente
SPR50N03
51A , 30V , RDS(ON) 9 mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SPR50N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
PR-8PP
FEATURES
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic
MARKING
50N03
= Date code
PACKAGE INFORMATION
Package
MPQ
PR-8PP
3K
Leader Size 13 inch
REF.
A B C D E F
Millimeter Min. Max. 4.9 5.1 5.7 5.9 5.95 6.2
1.27 BSC. 0.35 0.49 0.1 0.2
REF.
G H I J K L
Millimeter Min. Max. 0.8 1.0
0.254 Ref. 4.0 Ref. 3.4 Ref. 0.6 Ref. 1.4 Ref.
SD SD SD GD
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
TC=25°C
Continuous Drain Current 1@VGS=10V TC=100°C TA=25°C
Pulsed Drain Current 2 Single Pulse Avalanche Energy 3
TA=70°C
VDS VGS
ID
IDM EAS
30 ±20 51 36 12 9.6 130 130
Avalanche Current Power Dissipation 4
TC=25°C
IAS PD
34 46
Operating Junction & Storage Temperature
TJ, TSTG
-55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max). Thermal Resistance Junction-Case1(Max).
RθJA RθJC
62 2.7
Unit V V A A A A A mJ A W °C
°C / W °C / W
http://www.SeCoSGmbH.com/
20-May-2014 Rev.A
Any changes of specification will not be informed individually.
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Elektronische Bauelemente
SPR50N03
51A , 30V , RDS(ON) 9 mΩ N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS 30 - - V VGS=0, ID= 250uA
Gate-Threshold Voltage
VGS(th)
1 - 2.5 V VDS=VGS, ID=250uA
Forward Tranconductance
gfs
- 42 -
S VDS=5V, ID=30A
Gate-Source Leakage Current
IGSS - - ±100 nA VGS= ±20V
Drain-Source Leakage Current
- -1
VDS=24V, VGS=0, TJ=25°C
IDSS
uA
- -5
VDS=24V, VGS=0, TJ=55°C
Static Drain-Source On-Resistance 2
- -9
VGS=10V, ID=30A
RDS(ON)
mΩ
- - 13.5
VGS=4.5V, ID=15A
Gate Resistance
Rg
-
2.1 3.5
Ω f =1.0MHz
Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time
Qg Qgs Qgd Td(on) Tr Td(off) Tf
- 10.6 - 4.2 -4- 6.4 - 70.6 - 22.4 -8-
ID=15A nC VDS=15V
VGS=4.5V
VDD=15V
nS
ID=15A VGS=10V
RG=3.3Ω
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss - 1127 -
VGS =0
Coss
- 194 -
pF VDS=15V
Crss - 77 -
f =1.0MHz
Guaranteed Avalanche Characteristics
Single Pulse Avalanche Energy 5
EAS
45 -
- mJ VDD=25V, L=0.1mH, IAS=20A
Diode Forward Voltage 2 Continuous Source Current 1,6 Pulsed Source Current 2,6
Source-Drain Diode
VSD - - 1 V IS=1A, VGS=0V
IS - - 51 A .