Document
Ordering number:EN6101
NPN Triple Diffused Planar Silicon Transistor
2SC5443
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2048B
[2SC5443]
20.0 3.3
5.0
2.0 1.0
20.7 26.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
2.0 3.4
1.2 1 23
5.45 5.45
2.8
0.6
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL
Conditions
Ratings 1500 800 6 20 40 3.5 180 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector Cutoff Current
DC Current Gain
Symbol
Conditions
ICES VCEO(sus)
IEBO ICBO hFE1 hFE2
VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 VCB=800V, IE=0 VCE=5V, IC=1.0A VCE=5V, IC=16A
Ratings min typ max
Unit
1.0 mA
800 V
1.0 mA
10 µA
20 30
47
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61099TS (KOTO) TA-1618 No.6101–1/4
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Storage Time Fall Time
Switching Time Test Circuit
2SC5443
Symbol
Conditions
VCE(sat) VBE(sat)
tstg tf
IC=16A, IB=4A IC=16A, IB=4A IC=12A, IB1=2.4A, IB2=–4.8A IC=12A, IB1=2.4A, IB2=–4.8A
PW=20µs D.C.≤1%
I NPUT
50Ω
IB1 IB2
VR RB
+
100µF
OUTPUT
+
470µF
RL=16.7Ω
VBE=-2V
VCC=200V
Ratings min typ max
Unit
5V
1.5 V
3.0 µs
0.2 µs
Collector Current, IC – A
I C - VCE
20
5.0A
18 16 14 12 10
8
3.0A 2.5A 2.0A 1.5A
1.0A
0.5A
6
4.5A 4.0A 3.5A
4
2
0 IB= 0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE – V
hFE - I C
7
5
Ta=120°C
3
2 25°C
VCE= 5V
–40°C
10
7
5
3 2
1.0 7 7 0.1
2 3 5 7 1.0
2 3 5 7 10
Collector Current, IC – A
23
Collector-to-Emitter Saturation Voltage, VCE(sat) – V
Collector Current, IC – A
I C - VBE
22
VCE= 5V
20
18
16
14
12
10
8
Ta=120°C 25°C –40°C
6
4
2
0 0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V
7 5
IC / IB=5
VCE(sat) - I C
1.4
3 2
1.0 7 5
3
2
Ta=–40°C
0.1 7
5 120°C 25°C
3 7 0.1
2 3 5 7 1.0
2 3 5 7 10
Collector Current, IC – A
23
DC Current Gain, hFE
No.6101–2/4
Switching Time, SW Time – µs
Collector Current, IC – A
2SC5443
SW Time - I C
7
5 tstg
3 2
1.0
7
5 tf
3
2
VCC= 200V
0.1 IC / IB1=5 7 IB2/ IB1=2
5 R load
7 0.1 2 3
5 7 1.0
2 3 57
Collector Current, IC – A
10
23
7 5
ICP
3 2
IC
10 7 5
3 2
Forward Bias A S O
PC =180W
100µs
300µs 1ms
10ms DC o
p
e
r
a
t
io
n
1.0 7 5
3 2
0.1
7
5 Tc=25°C 3 Single pulse
2 2 3 5 7 10
2 3 5 7 100 2 3 5 7 1000
Collector-to-Emitter Voltage, VCE – V
2
4.0 PC - Ta
3.5
3.0
2.0 No heat sink
1.0
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – °C
Collector Dissipation, PC – W
Collector Current, IC – A
Switching Time, SW Time – µs
SW Time - I B2
10 7
5 tstg
3
2
tf
1.0 7 5
3
2 VCC = 200V
IC=12A
0.1 IB1=2.4A
7 R load
7 0.1
2
3
5 7 1.0
2 3 5 7 10
Base Current, IB2 – A
Reverse Bias A S O
7 5
3 2
2
10 7 5
3 2
1.0
7
5 L =100µH
3 IB2 = -5A 2 Tc = 25°C
Single pulse
0.1 5 7 100
23
5 7 1000
Collector-to-Emitter Voltage, VCE – V
2
PC - Tc
200
3
180
160
140
120
100
80
60
40
20
0 0 20 40 60 80 100 120 140 160
Case Temperature, Tc – °C
Collector Dissipation, PC – W
No.6101–3/4
2SC5443
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should al.