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C5443 Dataheets PDF



Part Number C5443
Manufacturers Sanyo
Logo Sanyo
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet C5443 DatasheetC5443 Datasheet (PDF)

Ordering number:EN6101 NPN Triple Diffused Planar Silicon Transistor 2SC5443 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5443] 20.0 3.3 5.0 2.0 1.0 20.7 26.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Volt.

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Ordering number:EN6101 NPN Triple Diffused Planar Silicon Transistor 2SC5443 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5443] 20.0 3.3 5.0 2.0 1.0 20.7 26.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C 2.0 3.4 1.2 1 23 5.45 5.45 2.8 0.6 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL Conditions Ratings 1500 800 6 20 40 3.5 180 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain Symbol Conditions ICES VCEO(sus) IEBO ICBO hFE1 hFE2 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 VCB=800V, IE=0 VCE=5V, IC=1.0A VCE=5V, IC=16A Ratings min typ max Unit 1.0 mA 800 V 1.0 mA 10 µA 20 30 47 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61099TS (KOTO) TA-1618 No.6101–1/4 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Storage Time Fall Time Switching Time Test Circuit 2SC5443 Symbol Conditions VCE(sat) VBE(sat) tstg tf IC=16A, IB=4A IC=16A, IB=4A IC=12A, IB1=2.4A, IB2=–4.8A IC=12A, IB1=2.4A, IB2=–4.8A PW=20µs D.C.≤1% I NPUT 50Ω IB1 IB2 VR RB + 100µF OUTPUT + 470µF RL=16.7Ω VBE=-2V VCC=200V Ratings min typ max Unit 5V 1.5 V 3.0 µs 0.2 µs Collector Current, IC – A I C - VCE 20 5.0A 18 16 14 12 10 8 3.0A 2.5A 2.0A 1.5A 1.0A 0.5A 6 4.5A 4.0A 3.5A 4 2 0 IB= 0 0 1 2 3 4 5 6 7 8 9 10 Collector-to-Emitter Voltage, VCE – V hFE - I C 7 5 Ta=120°C 3 2 25°C VCE= 5V –40°C 10 7 5 3 2 1.0 7 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC – A 23 Collector-to-Emitter Saturation Voltage, VCE(sat) – V Collector Current, IC – A I C - VBE 22 VCE= 5V 20 18 16 14 12 10 8 Ta=120°C 25°C –40°C 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, VBE – V 7 5 IC / IB=5 VCE(sat) - I C 1.4 3 2 1.0 7 5 3 2 Ta=–40°C 0.1 7 5 120°C 25°C 3 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC – A 23 DC Current Gain, hFE No.6101–2/4 Switching Time, SW Time – µs Collector Current, IC – A 2SC5443 SW Time - I C 7 5 tstg 3 2 1.0 7 5 tf 3 2 VCC= 200V 0.1 IC / IB1=5 7 IB2/ IB1=2 5 R load 7 0.1 2 3 5 7 1.0 2 3 57 Collector Current, IC – A 10 23 7 5 ICP 3 2 IC 10 7 5 3 2 Forward Bias A S O PC =180W 100µs 300µs 1ms 10ms DC o p e r a t io n 1.0 7 5 3 2 0.1 7 5 Tc=25°C 3 Single pulse 2 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 Collector-to-Emitter Voltage, VCE – V 2 4.0 PC - Ta 3.5 3.0 2.0 No heat sink 1.0 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – °C Collector Dissipation, PC – W Collector Current, IC – A Switching Time, SW Time – µs SW Time - I B2 10 7 5 tstg 3 2 tf 1.0 7 5 3 2 VCC = 200V IC=12A 0.1 IB1=2.4A 7 R load 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Base Current, IB2 – A Reverse Bias A S O 7 5 3 2 2 10 7 5 3 2 1.0 7 5 L =100µH 3 IB2 = -5A 2 Tc = 25°C Single pulse 0.1 5 7 100 23 5 7 1000 Collector-to-Emitter Voltage, VCE – V 2 PC - Tc 200 3 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc – °C Collector Dissipation, PC – W No.6101–3/4 2SC5443 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should al.


2SC5443 C5443 ST3232B


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