DatasheetsPDF.com

S-L2SA1365ELT3G

Leshan Radio Company
Part Number S-L2SA1365ELT3G
Manufacturer Leshan Radio Company
Description General Purpose Transistor
Published Apr 9, 2016
Detailed Description LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365 LT1G is a mini packagesilicon PNP epitaxial ...
Datasheet PDF File S-L2SA1365ELT3G PDF File

S-L2SA1365ELT3G
S-L2SA1365ELT3G

Overview
LESHAN RADIO COMPANY, LTD.
General Purpose Transistor DESCRIPTION L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).
F.
EATURE ●Small collector to emitter saturation voltage.
VCE(sat)=-0.
2V typ ●Excellent linearity of DC forward current gain.
●Super mini package for easy mounting ●High collector current ICM=-1A ●High gain band width product fT =180MHz typ ●We declare that the material of product compliance with RoHS requirements.
●We declare that the material of product is ROHS compliant ●S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, AEC-Q101 Qualified and PPAP Capa...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)