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L2SA1365FLT3G Dataheets PDF



Part Number L2SA1365FLT3G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description General Purpose Transistor
Datasheet L2SA1365FLT3G DatasheetL2SA1365FLT3G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). F.EATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ●Excellent linearity of DC forward current gain. ●Super mini package for easy mounting ●High collector current ICM=-1A ●High gain band width product fT =180MHz typ ●We declare that the material of product compliance with RoHS requireme.

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LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). F.EATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ●Excellent linearity of DC forward current gain. ●Super mini package for easy mounting ●High collector current ICM=-1A ●High gain band width product fT =180MHz typ ●We declare that the material of product compliance with RoHS requirements. ●We declare that the material of product is ROHS compliant ●S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, AEC-Q101 Qualified and PPAP Capable. L2SA1365*LT1G S-L2SA1365*LT1G 3 1 2 SOT–23 APPLICATION Small type motor drive, relay drive, power supply. MAXIMUM RATINGS(Ta=25℃) Symbol Parameter VCBO Collector to Base voltage VCEO Collector to Emitter voltage VEBO Emitter to Base voltage I O Collector current Pc Collector dissipation Tj Junction temperature Tstg Storage temperature Ratings -25 -20 -4 -7 00 150 +125 -55~+125 Unit V V V mA mW ℃ ℃ 3 COLLECTOR 1 BASE ORDERING INFORMATION 2 EMITTER Device Marking L2SA1365ELT1G S-L2SA1365ELT1G L2SA1365ELT3G S-L2SA1365ELT3G L2SA1365FLT1G S-L2SA1365FLT1G L2SA1365FLT3G S-L2SA1365FLT3G L2SA1365GLT1G S-L2SA1365GLT1G L2SA1365GLT3G S-L2SA1365GLT3G AE AE AF AF AG AG Shipping 3000/Tape & Reel 10000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel ELECTRICAL CHARACTERISTICS(Ta=25℃) Parameter C to B break down voltage E to B break down voltage C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E Saturation Vlotage Gain bandwidth product Symbol Test conditions V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO hFE VCE(sat) fT I C=-10μA , I E =0 I E=-10μA , I C =0 I C=-100μA ,R BE=∞ V CB=-25V, I E=0mA V EB=-2V, I C=0mA V CE=-4V, I C=-100mA I C=-500mA ,IB=-25mA V CE=-6V, I E=10mA ※) It shows hFE classification in below table. Item EFG hFE Item 150~300 250~500 400~800 ※ Limits Min Typ -25 -4 -20 --150 - -0.2 - 180 Max - -1 -1 800 -0.5 - Unit V V V μA μA V MHz Rev.O 1/3 LESHAN RADIO COMPANY, LTD. L2SA1365*LT1G S-L2SA1365*LT1G Rev.O 2/3 LESHAN RADIO COMPANY, LTD. L2SA1365*LT1G S-L2SA1365*LT1G A L 3 BS 12 VG C D H K 0.037 0.95 SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 J K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.035 0.9 0.079 2.0 0.031 0.8 inches mm Rev.O 3/3 .


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