INC6005AC1

DESCRIPTION INC6005AC1 is a silicon NPN transistor. It is designed with high voltage. FEATURE ・Super mini package for easy mounting ・High voltage VCEO=400V APPLICATION DC/DC convertor, High voltage switching 2.8 1.90 0.95 0.95 0.4 INC6005AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING 2.8 0.65 1.5 0.65 UNIT：mm ① ②③ 1.1 0.8 0～0.1 0.13 MAXIMUM RATING（Ta=25℃） SYMBOL PARAMETER VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage I C Collector current PC Collector dissipation(Ta=25℃) Tj Junction temperature Tstg Storage temperature Terminal Connector ①：Base ②：Emitter ③：Collector JEITA:SC-59 JEDEC: Similar to TO-236 RATING 400 7 400 100 200 ＋150 -55～＋150 UNIT V V V mA mW ℃ ℃ MARKING Type Name C LA ELECTRICAL CHARACTERISTICS（Ta=25℃） SYMBOL PARAMETER TEST CONDITIONS V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO ｈＦＥ VCE(sat) fT Cob C to B break down voltage E to B break down voltage C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage Gain bandwidth product Collector output capacitance I C=50μA，I E=0mA I E=50μA，I C=0mA I C=1mA，R BE=∞ VCB=400V，I E =0mA VEB=6V，I C=0mA VCE=10V，I C=1mA I C=10mA，I B=1mA VCE=20V，I E=-10mA，f=100MHz VCB=10V，I E=0mA，f=1MHz LIMITS MIN TYP MAX 400 - - 7- - 400 - - -- 1 -- 1 82 - 280 - - 0.5 - 70 - - 3.3 - UNIT V V V μA μA V MHz pF ISAHAYA ELECTRONICS CORPORATION TYPICAL CHARACTERISTI...