Document
MIL-PRF-38534 AND 38535 CERTIFIED FACILITY
29 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE
4301
FEATURES:
75 Volt Motor Supply Voltage 29 Amp Output Switch Capability, All N-Channel MOSFET Output Bridge 100% Duty Cycle High Side Conduction Capable Suitable for PWM Applications from DC to 100KHz Shoot-Through/Cross Conduction Protection Undervoltage Lockout Protection Programmable Dead-Time Control Low Active Enable for Bridge Shutdown Control Isolated Package Design for High Voltage Isolation Plus Good Thermal Transfer Available with Three Lead Bend Options Contact MSK for MIL-PRF-38534 Qualification Status
DESCRIPTION:
The MSK4301 is a 3 phase MOSFET bridge plus drivers in a convenient isolated hermetic package. The hybrid is capable of 29 amps of output current and 75 volts of DC bus voltage. It has a full line of protection features, including undervoltage lockout protection of the bias voltage, cross conduction control and a user programmable dead-time control for shoot-through elimination. In addition, the bridge may be shut down by using the Enable control. The MSK4301 provides good thermal conductivity for the MOSFETs due to the electrically isolated package design that allows direct heat sinking of the device without insulators.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
3 Phase Brushless DC Servo Control Fin Actuator Control Gimbal Control
3 Phase AC Induction Motor Control HVAC Blower Control
PIN-OUT INFORMATION
1 BH 2 BL 3 AL 4 AH 5 SWR 6 VBIAS 7 EN 8 CL 9 CH 10 GND
20 AØ 19 AØ 18 V+ 17 V+ 16 BØ 15 BØ 14 CØ 13 CØ 12 RSENSE 11 RSENSE
1 8548-71 Rev. J 1/15
ABSOLUTE MAXIMUM RATINGS 6
V+ High Voltage Supply 7 VBIAS Bias Supply VIND Logic Input Voltages IOUT Continuous Output Current IPK Peak Output Current AØ, BØ, CØ RSENSE
-3V transient to +75V -0.3V to +16V
-0.3V to VBIAS +0.3V 29A 41A
-3V transient to +75V -3V transient to +3V
θJC Thermal Resistance MOSFETS @ 125°C 0.8°C/W
TST Storage Temperature Range 8
-65°C to +150°C
TLD Lead Temperature Range
(10 Seconds)
+300°C
TC Case Operating Temperature
MSK4301H
-55°C to +125°C
MSK4301
-40°C to +85°C
TJ Junction Temperature
+150°C
ELECTRICAL SPECIFICATIONS
Parameter
Test Conditions
CONTROL SECTION
VBIAS Quiescent Current
All Inputs Off
VBIAS Operating Current
f=20KHz, 50% Duty Cycle
Undervoltage Threshold (Falling)
Undervoltage Threshold (Rising)
Low Level Input Voltage 1
High Level Input Voltage 1
Low Level Input Current High Level Input Current
1 1
VIN=0V VIN=5V
OUTPUT BRIDGE
Drain-Source Breakdown Voltage 1
ID=250µA, All Inputs Off
Drain-Source Leakage Current 1
VDS=75V
Drain-Source On Resistance (Each FET)
ID=29A
Drain-Source On Resistance 1
(Each FET, For Thermal Calculations Only)
GroupA 4
MSK4301H 3
Subgroup Min. Typ. Max.
1,2,3 1,2,3
1 1 -
- 2.5 8
- 20 25
5.6 6.6
7.6
6.1 7.1
8.1
- - 0.8
2.7 -
-
60 100 135
-1 - +1
-
75 -
-
- - - 250
1 - - 0.022
- - - 0.013
MSK4301 2
Units
Min. Typ. Max.
- 2.5 8 mAmp
- 20 25 mAmp
5.6 6.6 7.6 Volts
6.1 7.1 8.1 Volts
- - 0.8 Volts
2.7 -
- Volts
60 100 135 µAmp
-1 - +1 µAmp
75 -
-V
- - 250 µAmp
- - 0.022 Ω
- - 0.013 Ω
SWITCHING CHARACTERISTICS
Rise Time 1
V+=28V
Fall Time 1
ID=29A
Turn-On Prop Delay (Lower) 1 Turn-Off Prop Delay (Lower) 1
SWR Resistor=∞ SWR Resistor=∞
Turn-On Prop Delay (Upper) 1
SWR Resistor=∞
Turn-Off Prop Delay (Upper) 1
SWR Resistor=∞
Dead Time
SWR =∞
Dead Time
SWR=12K
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward Voltage 1
ISD=29A
Reverse Recovery Time
NNOOTETSE: S
1
ISD=29A, di/dt=100A/µS
-
- 120
-
- 120
- nSec
- - 81 - - 81 - nSec
4
- 0.5 2
- 0.5 3 µSec
4 - 5 8 - 5 10 µSec
4 - 5 8 - 5 10 µSec
4
- 0.5 2
- 0.5 3 µSec
4
3.0 5.0
7.0 3.0 5.0 7.0 µSec
4
0.3 1.0
1.2 0.3 1.0 1.2 µSec
- - 1.05 1.30 - 1.05 1.30 Volts
-
- 120
-
- 120
- nSec
1 Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.
2 Industrial devices shall be tested to subgroups 1 and 4 unless otherwise specified.
3 Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.
4 Subgroups 5 and 6 testing available upon request.
5 Subgroup 1, 4 TA = TC = +25°C
2, 5 TA = TC = +125°C
3, 6 TA = TC = -55°
6 Continuous operation at or above absolute maximum ratings may adversly effect the device performance and/or life cycle. 7 When applying power to the device, apply the low voltage followed by the high voltage or alternatively, apply both at the same time
Do not apply high voltage without low voltage present. 8 Internal solder reflow temperature is 180°C, do not exceed.
2 8548-71 Rev. J 1/15
APPLICATION NOTES
MSK4301 PIN DESCRIPTIONS
AL,BL,CL - Are the lowside logic level digital inputs. These three inputs control the three lowside bridge transistors. If the highside inputs are low, then the lowside inputs will control both the lowside and the highside of the bridge, with deadtime set b.