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MSK3003 Dataheets PDF



Part Number MSK3003
Manufacturers MSK
Logo MSK
Description THREE PHASE BRIDGE MOSFET POWER MODULE
Datasheet MSK3003 DatasheetMSK3003 Datasheet (PDF)

MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. THREE PHASE BRIDGE MOSFET POWER MODULE 3003 FEATURES: Pin Compatible with MPM3003 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity Avalanche Rated Devices Interfaces Directly with Most Brushless Motor Drive IC's 55 Volt, 10 Amp Full Three Phase Bridge DESCRIPTION: The MSK3003 is a three phase bridge power circuit packaged in a space efficient isolated ceramic tab po.

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MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. THREE PHASE BRIDGE MOSFET POWER MODULE 3003 FEATURES: Pin Compatible with MPM3003 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity Avalanche Rated Devices Interfaces Directly with Most Brushless Motor Drive IC's 55 Volt, 10 Amp Full Three Phase Bridge DESCRIPTION: The MSK3003 is a three phase bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package. Consisting of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom transistors, the MSK3003 will interface directly with most brushless motor drive IC's without special gate driving requirements. The MSK3003 uses M.S.Kennedy's proven power hybrid technology to bring a cost effective high performance circuit for use in today's sophisticated servo motor and disk drive systems. The MSK3003 is a replacement for the MPM3003 with only minor differences in mechanical specifications. EQUIVALENT SCHEMATIC TYPICAL APPLICATIONS Three Phase Brushless DC Motor Servo Control Disk Drive Spindle Control Fin Actuator Control Az-El Antenna Control 1 PIN-OUT INFORMATION 1 SOURCE 2,4,6 2 GATE 2 3 GATE 1 4 DRAIN 1,2 5 GATE 4 6 DRAIN 3,4 12 SOURCE 1,3,5 11 SOURCE 1,3,5 10 GATE 5 9 DRAIN 5,6 8 GATE 6 7 GATE 3 8548-138 Rev. J 10/14 ABSOLUTE MAXIMUM RATINGS VDSS Drain to Source Voltage ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 55V MAX VDGDR Drain to Gate Voltage VGS (RGS=1MΩ) 55V MAX○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Gate to Source Voltage ID IDM (Continuous) ±20V MAX○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Continuous Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 10A MAX Pulsed Current 25A MAX○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Single Pulse Avalanche Energy (Q1,Q4) 71mJ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ (Q2,Q3) 96mJ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ELECTRICAL SPECIFICATIONS TJ JunctionTemperature +175°C MAX ○○○○○○○○○○ TST Storage Temperature Range 5 ○○ ○ ○ ○ -55°C to +150°C TC Case Operating Temperature Range -55°C to +125°C TLD Lead Temperature Range (10 Seconds Lead Only) ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 200°C MAX RTH-JC Thermal Resistance (Junction to Case) P-Channel @ 25°C ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 9.7°C/W P-Channel @ 125°C ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 14.5°C/W N-Channel @ 25°C ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 9.7°C/W N-Channel @ 125°C ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 14.5°C/W Parameter Test Conditions 4 Min. MSK3003 Typ. Max. Units Drain-Source Breakdown Voltage VGS=0 ID=0.25mA (All Transistors) 55 - - V Drain-Source Leakage Current VDS=55V VGS=0V (Q2,Q4,Q6) VDS=-55V VGS=0V (Q1,Q3,Q5) - - 25 μA - - -25 μA Gate-Source Leakage Current VGS=±20V VDS=0 (All Transistors) - - ±100 nA Gate-Source Threshold Voltage VDS=VGS ID=250μA (Q2,Q4,Q6) VDS=VGS ID=250μA (Q1,Q3,Q5) 2.0 - 4.5 V -2.0 - -4.5 V Drain-Source On Resistance 2 VGS=10V ID=10A (Q2,Q4,Q6) VGS=-10V ID=-7.2A (Q1,Q3,Q5) - - 0.15 Ω - - 0.28 Ω Drain-Source On Resistance 3 VGS=10V ID=10A (Q2,Q4,Q6) VGS=10V ID=-7.2A (Q1,Q3,Q5) - - 0.07 Ω - - 0.175 Ω Forward Transconductance 1 VDS=25V ID=10A (Q2,Q4,Q6) VDS=-25V ID=-7.2A (Q1,Q3,Q5) 4.5 2.5 - -S -S N-Channel (Q2,Q4,Q6) Total Gate Charge 1 ID=10A - - 20 nC Gate-Source Charge 1 VDS=44V - - 5.3 nC Gate-Drain Charge 1 VGS=10V - - 7.6 nC Turn-On Delay Time 1 VDD=28V - 4.9 - nS Rise Time 1 ID=10A - 34 - nS Turn-Off Delay Time 1 Fall Time 1 Input Capacitance 1 RG=24Ω RD=2.6Ω VGS=0V - 19 - nS - 27 - nS - 370 - pF Output Capacitance 1 VDS=25V - 140 - pF Reverse Transfer Capacitance 1 f=1MHz - 65 - pF P-CHANNEL (Q1,Q3,Q5) Total Gate Charge 1 ID=-7.2A - - 19 nC Gate-Source Charge 1 VDS=-44V - - 5.1 nC Gate-Drain Charge 1 VGS=-10V - - 10 nC Turn-On Delay Time 1 VDD=-28V - 13 - nS Rise Time 1 ID=-7.2A - 55 - nS Turn-Off Delay Time 1 Fall Time 1 Input Capacitance 1 RG=24Ω RD=3.7Ω VGS=0V - 23 - nS - 37 - nS - 350 - pF Output Capacitance 1 VDS=-25V - 170 - pF Reverse Transfer Capacitance 1 f=1MHz - 92 - pF BODY DIODE Forward On Voltage 1 IS=10A VGS=0V (Q2,Q4,Q6) IS=-7.2A VGS=0V (Q1,Q3,Q5) - 1.3 - V - -1.6 - V Reverse Recovery Time 1 IS=10A di/dt=100A/μS (Q2,Q4,Q6) IS=-7.2A di/dt=100A/μS (Q1,Q3,Q5) - 56 83 nS - 47 71 nS Reverse Recovery Charge 1 NOTES: IS=10A di/dt=100A/μS (Q2,Q4,Q6) IS=-7.2A di/dt=100A/μS (Q1,Q3,Q5) - 0.12 0.18 μC - 0.084 0.13 μC 1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only. 2 Resistance as seen at package pins. 3 Resistance for die only; use for thermal calculations. 4 TA=25°C unless otherwise specified. 5 Internal solder reflow temperature is 180°C, do not exceed. 2 8548-138 Rev. J 10/14 APPLICATION NOTES N-CHANNEL GATES (Q2,Q4,Q6) For driving the N-Channel gates, it is important to keep in mind that it is essentially like driving a capacitance to a sufficient voltage to get the channel fully.


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