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MSK3001 Dataheets PDF



Part Number MSK3001
Manufacturers MSK
Logo MSK
Description THREE PHASE BRIDGE MOSFET POWER MODULE
Datasheet MSK3001 DatasheetMSK3001 Datasheet (PDF)

THREE PHASE BRIDGE MOSFET POWER MODULE M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: Pin Compatible with IRFT001 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity Avalanche Rated Devices Interfaces Directly with Most Brushless Motor Drive IC's 100 Volt, 5 Amp Full Three Phase Bridge at 25°C 3001 (315) 701-6751 DESCRIPTION: The MSK 3001 is a three phase bridge power circuit packaged in a space efficient isolated .

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THREE PHASE BRIDGE MOSFET POWER MODULE M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: Pin Compatible with IRFT001 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity Avalanche Rated Devices Interfaces Directly with Most Brushless Motor Drive IC's 100 Volt, 5 Amp Full Three Phase Bridge at 25°C 3001 (315) 701-6751 DESCRIPTION: The MSK 3001 is a three phase bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package. Consisting of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom transistors, the MSK 3001 will interface directly with most brushless motor drive IC's without special gate driving requirements. The MSK 3001 uses M.S.Kennedy's proven power hybrid technology to bring a cost effective high performance circuit for use in today's sophisticated servo motor and disk drive systems. The MSK 3001 is a replacement for the IRFT001 with only minor differences in mechanical and electrical specifications. EQUIVALENT SCHEMATIC TYPICAL APPLICATIONS Three Phase Brushless DC Motor Servo Control Disk Drive Spindle Control Fin Actuator Control Az-El Antenna Control 1 PIN-OUT INFORMATION 1 Source 1,3,5 2 Gate 1 3 Gate 2 4 Drain 1,2 5 Gate 3 6 Drain 3,4 11 Source 2,4,6 10 Gate 6 9 Drain 5,6 8 Gate 5 7 Gate 4 Rev. C 7/10 ABSOLUTE MAXIMUM RATINGS VDSS VDGDR VGS ID IDM RTH-JC Drain to Source Voltage 100V MAX ○○○○ Drain to Gate Voltage (R =1MΩ) 100V MAXGS ○○○○○○○○○○○ Gate to Source Voltage (Continuous) ±20V MAX ○○○○○○○○○○ Continuous Current 5.6A MAX ○○○○○○○ Pulsed Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 22A MAX Thermal Resistance (Junction to Case) ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 6°C/W ELECTRICAL SPECIFICATIONS Single Pulse Avalanche Energy (Q1,Q3,Q5) 91mJ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ (Q2,Q4,Q6) 210mJ ○○○○○○○○○○○○○○○○○○○○○ TJ Junction Temperature ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +175°C MAX TST Storage Temperature ○ ○ ○ ○ ○ ○ ○ ○ -55°C to +150°C TC Case Operating Temperature Range -55°C to +125°C TLD Lead Temperature Range (10 Seconds Lead Only) ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 200°C MAX Parameter Test Conditions 4 Min. MSK3001 Typ. Max. Units Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate-Source Threshold Voltage Drain-Source On Resistance 2 Drain-Source On Resistance 3 Forward Transconductance 1 VGS=0 ID=0.25mA (All Transistors) VDS=100V VGS=0V (Q1,Q3,Q5) VDS=-100V VGS=0V (Q2,Q4,Q6) VGS=±20V VDS=0 (All Transistors) VDS=VGS ID=250μA (Q1,Q3,Q5) VDS=VGS ID=250μA (Q2,Q4,Q6) VGS=10V ID=5.6A (Q1,Q3,Q5) VGS=-10V ID=-3.4A (Q2,Q4,Q6) VGS=10V ID=5.6A (Q1,Q3,Q5) VGS=10V ID=-3.4A (Q2,Q4,Q6) VDS=25V ID=5.7A (Q1,Q3,Q5) VDS=-50V ID=-3.4A (Q2,Q4,Q6) 100 - -V - - 25 μA - - -100 μA - - ±100 nA 2.0 - 4.0 V -2.0 - -4.0 V - 0.18 0.30 Ω - 0.37 0.75 Ω - - 0.21 Ω - - 0.60 Ω 2.7 - -S 1.5 - -S N-Channel (Q1,Q3,Q5) Total Gate Charge 1 Gate-Source Charge 1 Gate-Drain Charge 1 Turn-On Delay Time 1 Rise Time 1 Turn-Off Delay Time 1 Fall Time 1 Input Capacitance 1 Output Capacitance 1 Reverse Transfer Capacitance 1 ID=5.7A VDS=80V VGS=10V VDD=50V ID=5.7A RG=22Ω RD=8.6Ω VGS=0V VDS=25V f=1MHz - - 25 nC - - 4.8 nC - - 11 nC - 4.5 - nS - 23 - nS - 32 - nS - 23 - nS - 330 - pF - 92 - pF - 54 - pF P-CHANNEL (Q2,Q4,Q6) Total Gate Charge 1 Gate-Source Charge 1 Gate-Drain Charge 1 Turn-On Delay Time 1 Rise Time 1 Turn-Off Delay Time 1 Fall Time 1 Input Capacitance 1 Output Capacitance 1 Reverse Transfer Capacitance 1 ID=-6.8A VDS=-80V VGS=-10V VDD=-50V ID=-6.8A RG=18Ω RD=7.1Ω VGS=0V VDS=-25V f=1MHz - - 18 nC - - 3.0 nC - - 9.0 nC - 9.6 - nS - 29 - nS - 21 - nS - 25 - nS - 390 - pF - 170 - pF - 45 - pF BODY DIODE Forward On Voltage 1 Reverse Recovery Time 1 Reverse Recovery Charge 1 NOTES: IS=5.5A VGS=0V (Q1,Q3,Q5) IS=-5.6A VGS=0V (Q2,Q4,Q6) IS=5.7A di/dt=100A/μS (Q1,Q3,Q5) IS=-6.8A di/dt=100A/μS (Q2,Q4,Q6) IS=5.7A di/dt=100A/μS (Q1,Q3,Q5) IS=-6.8A di/dt=100A/μS (Q2,Q4,Q6) - 1.3 - V - -1.6 - V - 99 150 nS - 100 200 nS - 0.39 0.58 μC - 0.33 0.66 μC 1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only. 2 Resistance as seen at package pins. 3 Resistance for die only; use for thermal calculations. 4 TA=25°C unless otherwise specified. 2 Rev. C 7/10 APPLICATION NOTES N-CHANNEL GATES (Q1,Q3,Q5) For driving the N-Channel gates, it is important to keep in mind that it is essentially like driving a capacitance to a sufficient voltage to get the channel fully on. Driving the gates to +15 volts with respect to their sources assures that the transistors are on. This will keep the dissipation down to a minimum level [RDS(ON) specified in the data sheet]. How quickly the gate gets turned ON and OFF will determine the dissipation of the transistor while it is transitioning f.


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