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V12W60C-M3

Part Number	V12W60C-M3
Manufacturer	Vishay
Description	Dual Trench MOS Barrier Schottky Rectifier
Features	• Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High eff...
Published	Apr 8, 2016
Datasheet	V12W60C-M3 PDF File

Features

• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Material categorization: For definitions of comp...

Similar Datasheet

V12W60C-M3 Dual Trench MOS Barrier Schottky Rectifier - Vishay

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