Elektronische Bauelemente
STB1277
-2A , -30V PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-...
Elektronische Bauelemente
STB1277
-2A , -30V
PNP Plastic Encapsulated
Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching and Amplification. High Total Power Dissipation. High hFE and Good Linearity
TO-92
CLASSIFICATION OF hFE
Product-Rank
STB1277-O
Range
100~200
STB1277-Y 160~320
3
Base
Collector
2
1Emitter 2Collector 3Base
1
Emitter
REF.
A B C D E
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
REF.
F G H J K
Millimeter Min. Max. 0.30 0.51
1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
VCBO
-30
Collector to Emitter Voltage
VCEO
-30
Emitter to Base Voltage
VEBO
-5
Collector Current - Continuous
IC -2
Collector Power Dissipation
PC 0.625
Junction, Storage Temperature
TJ, TSTG
150, -55~150
Unit V V V A W °C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
-30
-
-
V IC= -0.1mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
-30
-
-
V IC= -1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V IE= -1mA, IC=0
Collector Cut-Off Current
ICBO - - -0.1 µA VCB= -30V, IE=0
Emitter Cut-Off Current
IEBO - - -0.1 µA VEB= -5V, IC=0
DC Current Gain
hFE 100 - 320
VCE= -2V, IC= -500mA
Collector to Emitter Saturat...