SSU90N04-02B

Elektronische Bauelemente SSU90N04-02B N-Ch Enhancement Mode Power MOSFET 162A, 40V, RDS(ON) 2.3mΩ RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology. PACKAGE INFORMATION Package MPQ TO-263 0.8K Leader Size 13 inch 1 Gate 2 Drain 3 Source TO-263 2 1 REF. A b L4 C L3 L1 E Millimeter Min. Max. 4.00 4.85 0.68 1.00 0.00 0.30 0.36 0.53 1.50 REF 2.29 2.79 9.60 10.45 REF. c2 b2 D e L L2 Millimeter Min. Max. 1.10 1.45 1.34 REF 8.0 9.15 2.54 REF 14.6 15.85 1.27 REF ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage VDS 40 Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 TC=25°C VGS ID IDM ±20 162 360 Unit V V A A Continuous Source Current (Diode Conduction) 1 TC=25°C IS 90 A Total Power Dissipation TC=25°C PD 234 W Operating Junction and Storage Temperature Range TJ, TSTG -55~175 °C Thermal Resistance Rating Maximum T...