Silicon N Channel MOS FET
H5N5006FM
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance: R DS (on) = 2.5 Ω typ. • L...
Description
H5N5006FM
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance: R DS (on) = 2.5 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A) Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A) Avalanche ratings
Outline
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D
123
G S
REJ03G1114-0200 (Previous: ADE-208-1112)
Rev.2.00 Sep 07, 2005
1. Gate 2. Drain 3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6
H5N5006FM
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C 3. Tch ≤ 150°C
Symbol
VDSS
VGSS ID
ID (pulse) Note 1 IDR
IDR (pulse) Note 1 IAP Note 3 Pch Note 2
θ ch-c Tch
Tstg
Value 500 ±30
3 12 3 12 3 25 5.0 150 –55 to +150
(Ta = 25°C) Unit
V V A A A A A W °C/W °C °C
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total...
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