RoHS
BCX20LT1
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTORS
ABSOLUTE MAXIMUM RATINGS at Ta=25
Charact...
RoHS
BCX20LT1
NPN EPITAXIAL SILICON
TRANSISTOR
GENERAL PURPOSE
TRANSISTORS
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
Unit
Collector-Base Voltage
Vcbo
30
V
Collector-Emitter Voltage
Vceo
25
V
Emitter-Base Voltage
Vebo
5.0
V
Collector Current
Ic 500
mA
Total Device Dissipation FR-5 Board(1) Ta=25
PD 225
mw
Derate above 25
1.8 mW/
Total Device Dissipation Alumina Substrate,(2) Ta=25 Derate above 25 Junction Temperature
ICStorage Temperature
PD 300
2.4 Tj 150 Tstg -55-150
mw mW/
NELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Typ Max Unit
OCollector-Base Voltage
V(BR)ceo 25
V
Collector-Emitter Voltage
V(BR)ces 30
V
REmitter Cutoff Current
Iebo 10 uA
TCollector Cutoff Current
Icbo
ECDC Current Gain LCollector-Emitter Saturation Voltage
HFE Vce(sat)
100 70 40
100 nA 5.0 uA 600
620 mV
Base-Emitter Saturation Voltage
Vbe(on)
E* 1.Total Device Dissipation : FR=1X0.75X0.062in .
2.Alumina=0.4 X 0.3 X 0.024in.99.5% alumina
1.2
V
JDEVICE MARKING: WEBCX20LT1=U2
2.9 1.9 0.95 0.95 0.4
CO.,LTD1. 2.4 1.3
1 . G AT E 2.SOURCER 3.DRAIE
Unit:mm
Test Conditions Ic=10mA Ib=0
Ic=10uA Ic=0
Veb=5V Ic=0 Vcb=20V Ie=0 Vcb=20V Ie=0 TA=150 Vce=1.0V Ic=-100mA Vce=1.0V Ic=-300mA Vce=1.0V Ic=-500mA Ic=-500mA Ib=-50mA Vbe=1V Ic=500mA
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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