NPN TRANSISTOR
RoHS
BCW31
FEATURES
* Low current(100mA)
* Low voltage(32V)
* General purpose swithching and amplification
DABSOLUT...
Description
RoHS
BCW31
FEATURES
* Low current(100mA)
* Low voltage(32V)
* General purpose swithching and amplification
DABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating Unit
TCollector-Base Voltage
Vcbo 32 V
.,LCollector-Emitter Voltage
Vceo 32 V
Emitter-Base Voltage
Veb 5 V
Collector Current
Ic 100 mA
Collector Dissipation Ta=25 * PD 250 mW
OJunction Temperature
Tj 150
2.9 1.9 0.95 0.95 0.4
Storage Temperature
Tstg -65-150
CELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Voltage BVcbo 32
ICCollector-Emitter
Breakdown BVceo 32
Voltage#
NEmitter-Base Breakdown Voltage
BVebo 5
OCollector Cutoff Current
Icbo
100 10
Emitter Cutoff Current
Iebo
100
RBase-Emitter Voltage
Vbe 550
700
Collector Capacitance
Cob 2.5
TDC Current Gain
190 Hfe
110 220
ECCollector-Emitter Saturation Voltage Vce(sat)
120 250 210
LBase-Emitter Saturation Voltage
Vbe(sat)
750 850
ETransition Frequency
fT 100
Noise figure
10 F
J* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 . E# Pulse Test : Pulse Width 300uS,Duty cycle 2%
DEVICE MARKING:
W BCW31=D1t
1.
2.4 1.3
1 . G AT E 2 .SO U RC E R 3.DRAIE
U nit :m m
Unit Test Conditions V Ic=100uA Ie=0 V Ic= 2mA Ib=0
V Ie= 100uA Ic=0 nA Vcb= 32V Ie=0 uA Vcb=32V Ie=0 Tj=100 nA Veb=5V Ic=0 mV Ic=2mA Vce=5V pF Ie=0 Vcb=10V f=1MHz
Vce= 5V Ic= 10uA Vce= 5V Ic= 2mA Ic= 10mA Ib= 0.5mA mV Ic=50mA Ib=2.5mA Ic= 10mA Ib= 0.5mA mV Ic=50mA Ib=2.5mA Vce=5V Ic=10mA M...
Similar Datasheet