Document
HCP60R750V
HCP60R750V
600V N-Channel Super Junction MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S #9GS=10V 100% Avalanche Tested
November 2014
BVDSS = 600 V RDS(on) typ = 0.67 ȍ ID = 7 A
TO-220
1 23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25) - Derate above 25
600 7 4.9 21
ρ30 90 4 0.5 83 0.66
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +150 300
Units V A A A V mJ A mJ W
W/
Thermal Resistance Characteristics
Symbol RșJC RșJA
Parameter Junction-to-Case Junction-to-Ambient
Typ. ---
Max. 1.5 60.5
Units /W
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HCP60R750V
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 4.4 A
2.5 --
gFS Forward Transconductance
Off Characteristics
VDS = 10, ID = 4.4 A
--
BVDSS IDSS IGSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS = 0 V, ID = 250 Ꮃ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125 VGS = ρ20 V, VDS = 0 V
600 ----
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance
Switching Characteristics
VDS = 50 V, VGS = 0 V, f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
-----
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS = 300 V, ID = 7 A, RG = 25
VDS = 480 V, ID = 7 A VGS = 10 V
--------
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 7 A, VGS = 0 V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 7 A, VGS = 0 V diF/dt = 100 A/ȝV
------
-- 3.5
0.67 0.75 5 --
-- --- 10 -- 100 -- ρ100
710 920 200 260 3.5 4.6 0.5 --
20 50 25 60 60 130 25 60 14 18.5 4 -5 --
-- 7 -- 21 -- 1.2 300 -2.4 --
V S
V Ꮃ Ꮃ Ꮂ
Ꮔ Ꮔ Ꮔ
Ꭸ Ꭸ Ꭸ Ꭸ nC nC nC
A
V Ꭸ ȝ&
Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS=4A, VDD=50V, RG=25:, Starting TJ =25qC
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HCP60R750V
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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HCP60R750V
Typical Characteristics (continued)
BVDSS, (Normalized) Drain-Source Breakdown Voltage
ID, Drain Current [A]
1.2
1.1
1.0
0.9 0.8
-100
Note : 1. VGS = 0 V 2. ID = 250PA
-50 0 50 100 150
T , Junction Temperature [oC] J
200
Figure 7. Breakdown Voltage Variation vs Temperature
Operation in This Area is Limited by R DS(on)
10 Ps
101 100 Ps 1 ms
10 ms 100 ms 100 DC
10-1 10-2
10-1
* Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse
100 101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
R , (Normalized) DS(ON)
Drain-Source On-Resistance
ID, Drain Current [A]
3.0
2.5
2.0
1.5
1.0
0.5
0.0 -100
Note : 1. VGS = 10 V 2. I = 4.4 A
D
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation vs Temperature
7
6
5
4
3
2
1
0 25 50 75 100 125
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current vs Case Temperature
150
ZTJC(t), Thermal Response
100 D=0.5
0.2
10-1
0.1 0.05
* Notes :
1. ZTJC(t) = 1.5 oC/W Max.
2. Duty Factor, D=t1/t2
3.
T JM
-
T C
=
P DM
*
ZTJC(t)
0.02 0.01
10-2 10-5
PDM
single pulse
10-4
10-3
10-2
t1 t2
10-1
100
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
101
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HCP60R750V
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
.ȍ
as DUT
12V 200nF 300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V 10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS RG
RL VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switc.