Document
HCD65R660S_HCU65R660S
June 2015
HCD65R660S / HCU65R660S
650V N-Channel Super Junction MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S #9GS=10V 100% Avalanche Tested
BVDSS = 650 V
RDS(on) typ = 0.6 ȍ
ID = 6.2 A
D-PAK I-PAK
2
1 1
32 3
HCD65R660S HCU65R660S 1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
650 6.2 3.5 18 ρ20 120 2 1 15
Power Dissipation (TA = 25)*
PD Power Dissipation (TC = 25) - Derate above 25
2.5 63 0.5
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +150 300
Units V A A A V mJ A mJ
V/ns W W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC RșJA
Junction-to-Case Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 2.0 50 110
Units /W
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HCD65R660S_HCU65R660S
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 3.0 A
2.8 --
Off Characteristics
BVDSS IDSS IGSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS = 0 V, ID = 250 Ꮃ VDS = 650 V, VGS = 0 V VDS = 520 V, TJ = 125 VGS = ρ20 V, VDS = 0 V
650 ----
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
-----
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS = 325 V, ID = 6.2 A, RG = 25
VDS = 520 V, ID = 6.2 A, VGS = 10 V
--------
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 6.2 A, VGS = 0 V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 3 A, VGS = 0 V diF/dt = 100 A/ȝV
------
-- 4.2 0.6 0.66
V
-- -- V -- 10 Ꮃ -- 100 Ꮃ -- ρ100 Ꮂ
550 -250 --
8 -4 --
Ꮔ Ꮔ Ꮔ
20 -- Ꭸ 20 -- Ꭸ 50 -- Ꭸ 20 -- Ꭸ 14 -- nC 3.5 -- nC 4.5 -- nC
-- 6.2 -- 18 -- 1.3 250 -2 --
A
V Ꭸ uC
Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS=2A, VDD=50V, RG=25:, Starting TJ =25qC
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ID, Drain Current [A]
HCD65R660S_HCU65R660S
Typical Characteristics
DS(ON)R [:], Drain-Source On-Resistance
VGS Top : 15.0 V
10.0 V 101 8.0 V
7.0 V 6.0 V 5.5 V Bottom : 5.0 V
100 100
* Notes : 1. 300us Pulse Test 2. TC = 25oC
101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
1.6
1.2 VGS = 10V
0.8
0.4 VGS = 20V
Note : TJ = 25oC 0.0
0 3 6 9 12 15
ID, Drain Current [A]
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
4000
Ciss = Cgs + Cgd (Cds = shorted) C =C +C
oss ds gd
Crss = Cgd
3000 2000 1000
0 10-1
Coss
* Note ; 1. V = 0 V
GS
2. f = 1 MHz
Ciss Crss
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
IDR, Reverse Drain Current [A]
ID, Drain Current [A]
10
25oC 1 150oC
-25oC
* Notes : 1. V = 30V
DS
2. 300us Pulse Test
0.1 2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1
150oC 25oC
0.1 0.0
* Notes : 1. VGS= 0V 2. 300us Pulse Test
0.2 0.4 0.6 0.8 1.0
VSD, Source-Drain Voltage [V]
1.2
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
VDS = 130V 10 VDS = 325V
VDS = 520V
8
6
4
2
Note : ID = 6.2A 0
0 3 6 9 12 15
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Capacitances [pF]
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HCD65R660S_HCU65R660S
Typical Characteristics (continued)
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9 0.8
-100
Note : 1. VGS = 0 V 2. ID = 250PA
-50 0 50 100 150
T , Junction Temperature [oC] J
200
Figure 7. Breakdown Voltage Variation vs Temperature
102
Operation in This Area is Limited by R DS(on)
10 Ps
101 100 Ps
1 ms
10 ms 100 DC
10-1 * Notes : 1. T = 25 oC
C
2. TJ = 150 oC 3. Single Pulse 10-2 10-1 100 101 102 103
VDS, Drain-Source Voltage [V.