DMN2022UFDF

Product Summary BVDSS 20V RDS(ON) Max 22mΩ @ VGS = 4.5V 26mΩ @ VGS = 2.5V 36mΩ @ VGS = 1.8V 50mΩ @ VGS = 1.5V ID Max TA = +25°C 7.9A 7.2A 6.1A 5.2A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Battery Management Application  Power Management Functions  DC-DC Converters DMN2022UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Case: U-DFN2020-6  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.0065 grams (Approximate) U-DFN2020-6 (Type F) D G ESD PROTECTED Top View Bottom View Pin Out Bottom View Gate Protection Diode S Internal Schematic O...