Document
DATA SHEET
COMPOUND TRANSISTOR
FB1 SERIES
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
FEATURES • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
QUALITY GRADES • Standard
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
FB1 SERIES LISTS
Products
Marking
FB1A4A FB1L2Q FB1A3M FB1F3P FB1J3P FB1L3N FB1A4M
P30 P31 P32 P33 P36 P34 P35
R1 (KΩ) −
0.47 1.0 2.2 3.3 4.7 10
R2 (KΩ) 10 4.7 1.0 10 10 10 10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
25
V
Emitter to base voltage
VEBO
10
V
Collector current (DC)
IC(DC)
0.7
A
Collector current (Pulse)
IC(pulse) *
1.0
A
Base current (DC)
IB(DC)
20
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150
°C
* PW≤10 ms, duty cycle≤50 %
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D16180EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan
©
21090928
FB1A4A ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Collector saturation voltage VCE(sat) **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW ≤ 350 µs, duty cycle ≤ 2 %
Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A IC = 0.5 A, IB = 5 mA VCE = 5.0 V, IC = 100 µA
FB1L2Q ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW ≤ 350 µs, duty cycle ≤ 2 %
Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.5 A VCE = 5.0 V, IC = 100 µA
FB1A3M ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
** PW ≤ 350 µs, duty cycle ≤ 2 %
Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.5 A VCE = 5.0 V, IC = 100 µA
FB1 SERIES
MIN.
300 300 135
− 7
TYP.
MAX. 100
.