JCS10N60T

N R N-CHANNEL MOSFET JCS10N60T MAIN CHARACTERISTICS Package ID 9.5 A VDSS 600 V Rdson（@Vgs=10V） 0.75Ω Qg 34 nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 20pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 20pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking JCS10N60CT-O-C-N-B JCS10N60FT-O-F-N-B JCS10N60FT-R-F-N-B JCS10N60CT JCS10N60FT JCS10N60FT Package TO-220C TO-220MF TO-220MF Halogen Free NO NO YES Packaging Tube Tube Tube Device Weight 2.15 g(typ) 2.20 g(typ) 2.20 g(typ) ：201112D 1/10 R ABSOLUTE RATINGS (Tc=25℃) JCS10N60T Parameter Symbol Value JCS10N60CT JCS10N60FT Unit － Drain-Source Voltage VDSS 600 600 V Drain Current -continuous ID T=25℃ T=100℃ 9.5 6.0 9.5* A 6.0* A （ 1） Drain Current – pulse（note 1） IDM 40 40* A Gate-Source Voltage VGSS ±30 V （ 2） Single Pulsed Avalanche Energy（note 2） EAS 713 mJ （ 1） Avalanche Current（note 1） IAR 9.5 A （ 1） Repetitive Avalanche Current（note 1） EAR 17.8 mJ （ 3） Peak Diode Recovery dv/dt（note 3） dv/dt 4.5 V/ns Power Dissipation PD TC=25℃ -Derate above 25℃ 178 1.43 50 W 0.4 W/℃ Operating and Storage Temperature Range TJ，TSTG -55～+150 ℃ Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature 300 ℃ ：201112D 2/10 R EL...