N-CHANNEL MOSFET
N R N-CHANNEL MOSFET
JCS5N50C
MAIN CHARACTERISTICS
Package
ID VDSS Rdson(Vgs=10V) Qg
5A 500 V 1.45Ω 14nC
z z ...
Description
N R N-CHANNEL MOSFET
JCS5N50C
MAIN CHARACTERISTICS
Package
ID VDSS Rdson(Vgs=10V) Qg
5A 500 V 1.45Ω 14nC
z z z UPS
APPLICATIONS
z High frequency switching mode power supply
z Electronic ballast z UPS
z z Crss ( 14pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss (typical 14pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes JCS5N50VC-O-V-N-B JCS5N50RC-O-R-N-B JCS5N50RC-O-R-N-A JCS5N50CC-O-C-N-B JCS5N50FC-O-F-N-B
Marking JCS5N50VC JCS5N50RC JCS5N50RC JCS5N50CC JCS5N50FC
Package IPAK DPAK DPAK TO-220C TO-220MF
Halogen Free NO NO NO NO NO
Packaging Tube Tube Brede Tube Tube
Device Weight 0.35 g(typ) 0.30g(typ) 0.30g(typ) 2.15 g(typ) 2.20 g(typ)
:201402B
1/14
R
ABSOLUTE RATINGS (Tc=25℃)
JCS5N50C
Parameter
Symbol
JCS5N50VC/RC
Value JCS5N50CC
- Drain-Source Voltage
VDSS
500
Drain Current -continuous
ID T=25℃ T=100℃
5 3.16
( 1)
Drain Current - pulse (note 1)
IDM
20
Gate-Source Voltage
VGSS
±30
( 2)
Single Pulsed Avalanche Energy(note 2)
EAS
305
( 1) Avalanche Current(note 1)
IAR
5
( 1)
Repetitive Avalanche Energy (note 1)
EAR
10.1
( 3) Peak Diode Recovery dv/dt
dv/dt
4.5
(note 3)
Power Dissipation
PD TC=25℃ -Derate above 25℃
91 0.73
101 0.81
Operating and Storage Temperature Range
TJ,TSTG
-55~+150
Maximum Lead Temperature for Soldering Purposes
TL
300
* *Drain current limited by maximum junction temperature
JCS5N50F...
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