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JCS5N50CC

JILIN SINO-MICROELECTRONICS

N-CHANNEL MOSFET

N R N-CHANNEL MOSFET JCS5N50C MAIN CHARACTERISTICS Package ID VDSS Rdson(Vgs=10V) Qg 5A 500 V 1.45Ω 14nC z z ...


JILIN SINO-MICROELECTRONICS

JCS5N50CC

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Description
N R N-CHANNEL MOSFET JCS5N50C MAIN CHARACTERISTICS Package ID VDSS Rdson(Vgs=10V) Qg 5A 500 V 1.45Ω 14nC z z z UPS APPLICATIONS z High frequency switching mode power supply z Electronic ballast z UPS z z Crss ( 14pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 14pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes JCS5N50VC-O-V-N-B JCS5N50RC-O-R-N-B JCS5N50RC-O-R-N-A JCS5N50CC-O-C-N-B JCS5N50FC-O-F-N-B Marking JCS5N50VC JCS5N50RC JCS5N50RC JCS5N50CC JCS5N50FC Package IPAK DPAK DPAK TO-220C TO-220MF Halogen Free NO NO NO NO NO Packaging Tube Tube Brede Tube Tube Device Weight 0.35 g(typ) 0.30g(typ) 0.30g(typ) 2.15 g(typ) 2.20 g(typ) :201402B 1/14 R ABSOLUTE RATINGS (Tc=25℃) JCS5N50C Parameter Symbol JCS5N50VC/RC Value JCS5N50CC - Drain-Source Voltage VDSS 500 Drain Current -continuous ID T=25℃ T=100℃ 5 3.16 ( 1) Drain Current - pulse (note 1) IDM 20 Gate-Source Voltage VGSS ±30 ( 2) Single Pulsed Avalanche Energy(note 2) EAS 305 ( 1) Avalanche Current(note 1) IAR 5 ( 1) Repetitive Avalanche Energy (note 1) EAR 10.1 ( 3) Peak Diode Recovery dv/dt dv/dt 4.5 (note 3) Power Dissipation PD TC=25℃ -Derate above 25℃ 91 0.73 101 0.81 Operating and Storage Temperature Range TJ,TSTG -55~+150 Maximum Lead Temperature for Soldering Purposes TL 300 * *Drain current limited by maximum junction temperature JCS5N50F...




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