N-CHANNEL MOSFET
N R N-CHANNEL MOSFET
JCS730
MAIN CHARACTERISTICS
Package
ID 5.5 A VDSS 400 V Rdson(Vgs=10V) 1.0 Ω Qg 31 nC
z z ...
Description
N R N-CHANNEL MOSFET
JCS730
MAIN CHARACTERISTICS
Package
ID 5.5 A VDSS 400 V Rdson(Vgs=10V) 1.0 Ω Qg 31 nC
z z z UPS
APPLICATIONS z High frequency switching
mode power supply z Electronic ballast z UPS
z z Crss ( 22pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss (typical 22pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes
Marking
JCS730V-O-V-N-B
JCS730V
JCS730R-O-R-N-B
JCS730R
JCS730R-O-R-N-A
JCS730R
JCS730S-O-S-N-B
JCS730S
JCS730B-O-B-N-B
JCS730B
JCS730C-O-C-N-B
JCS730C
JCS730F-O-F-N-B
JCS730F
Package IPAK DPAK DPAK TO-263 TO-262 TO-220C TO-220MF
Halogen Free Packaging
NO NO NO NO NO NO NO
Tube Tube Reel Tube Tube Tube Tube
Device Weight 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ)
:201204C
1/16
R
ABSOLUTE RATINGS (Tc=25℃)
JCS730
Parameter
Symbol
JCS730V/R
Value JCS730S/B/C
- Drain-Source Voltage
VDSS
400
Drain Current -continuous
ID T=25℃ T=100℃
5.5 3.5
( 1)
Drain Current - pulse (note 1)
IDM
22
Gate-Source Voltage
VGSS
±30
( 2)
Single Pulsed Avalanche Energy(note 2)
EAS
330
( 1) Avalanche Current(note 1)
IAR
5.5
( 1)
Repetitive Avalanche Energy EAR (note 1)
7.3
( 3) Peak Diode Recovery dv/dt
dv/dt
5.5
(note 3)
Power Dissipation
PD TC=25℃ -Derate above
59 0.48
73 0.58
25℃
Operating and Storage Temperature Range
TJ,TSTG
-55~+150
Maximum Lead Temper...
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