Ordering number : EN5696
NPN Triple Diffused Planar Silicon Transistor
2SC5416
Inverter Lighting Applications
Features...
Ordering number : EN5696
NPN Triple Diffused Planar Silicon
Transistor
2SC5416
Inverter Lighting Applications
Features
High breakdown voltage. High reliability (Adoption of HVP process). Adoption of MBIT process.
Package Dimensions
unit: mm 2079B-TO220FI (LS)
[2SC5416]
10.0 3.2
4.5 2.8
3.5 7.2
16.0
0.6
16.1 3.6
0.9 1.2
0.7
14.0
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
VCBO VCEO VEBO IC ICP PC
Tc=25°C
Junction Temperature
Tj
Storage Temperature
Tstg
0.75 1 23
2.55 2.55
2.4
1 : Base 2 : Collector 3 : Emitter SANYO : TO220FI (LS)
Ratings 1000 450 9 4 8 2 25 150
–55 to +150
Unit V V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current C-E Saturation Voltage B-E Saturation Voltage DC Current Gain
Storage Time Fall Time
ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) hFE(1) hFE(2) tstg tf
VCB=450V, IE=0 VCE=1000V, RBE=0 IC=100mA, IB=0 VEB=9V, IC=0 IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=5V, IC=0.1A VCE=5V, IC=1.5A IC=2A, IB1=0.4A, IB2=–0.8A IC=2A, IB1=0.4A, IB2=–0.8A
Ratings
Unit
min typ max
10 µA
1.0 mA
450 V
1.0 mA
1.0 V
1.5 V
30 40 50
10
2.5 µs
0.15 µs
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