Part Number |
V40DM120CHM3 |
Manufacturers |
Vishay |
Logo |
|
Description |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
Datasheet |
V40DM120CHM3 Datasheet (PDF) |
www.vishay.com
V40DM120C-M3, V40DM120CHM3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
TMBS ® eSMP® Series
TO-263AC (SMPD)
K
1
2 Top View
Bottom View
V40DM120C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
VRRM
120 V
IFSM VF at IF = 20 A (TA = 125 °C)
TJ max.
250 A 0.64 V 150 °C
Package
TO-263AC (SMPD)
Diode variations
Common cathode
FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C • AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and .