Part Number |
V40D120C |
Manufacturers |
Vishay |
Logo |
|
Description |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
Datasheet |
V40D120C Datasheet (PDF) |
www.vishay.com
V40D120C
Vishay General Semiconductor
Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.45 V at IF = 5 A
eSMP® Series SMPD (TO-263AC)
K
1
2 Top View
Bottom View
Anode 1 Anode 2
K Cathode
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
FEATURES
• Trench MOS Schottky technology
Available
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
VRRM
120 V
IFS.