N-Channel MOSFET
DMN1260UFA
12V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 12V
RDS(ON) max
366mΩ @ VGS = 4.5V 520mΩ @ ...
Description
DMN1260UFA
12V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 12V
RDS(ON) max
366mΩ @ VGS = 4.5V 520mΩ @ VGS = 2.5V 950mΩ @ VGS = 1.8V 1500mΩ @ VGS =1.5V
ID MAX TA = +25°C
0.5A
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Load Switch Power Management Functions Portable Power Adaptors
Features
0.4mm Ultra Low Profile Package for Thin Application 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 Low On-Resistance Low Input Capacitance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: X2-DFN0806-3 Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4 Weight: 0.00043 grams (Approximate)
X2-DFN0806-3
D
G
Bottom View
Top View Package Pin Configuration
Gate Protection Diode
S
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number DMN1260UFA-7B
Case X2-DFN0806-3
Packaging 10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Di...
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