DMN1150UFB

A D VNAENWC EP IRNOFDOURCMTA T I O N DMN1150UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 12V RDS(on) max 0.15Ω @ VGS = 4.5V 0.185Ω @ VGS = 2.5V 0.21Ω @ VGS = 1.8V ID TA = +25°C 1.41A 1.25A 1.16A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications DC-DC Converters Power management functions Features Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: X1-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (approximate) Drain X1-DFN1006-3 ESD PROTECTED Bottom View S D G Top View Internal Schematic Gate Body Diode Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMN1150UFB-7B Case X1-DFN1006-3 Packaging 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) &...