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DMN1032UCB4

Diodes
Part Number DMN1032UCB4
Manufacturer Diodes
Description N-CHANNEL MOSFET
Published Apr 5, 2016
Detailed Description ADVANCED INFORMATION PART OBSOLETE - CONTACT US DMN1032UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary VDSS ...
Datasheet PDF File DMN1032UCB4 PDF File

DMN1032UCB4
DMN1032UCB4

Overview
ADVANCED INFORMATION PART OBSOLETE - CONTACT US DMN1032UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary VDSS 12V RDS(ON) 18mΩ Qg 3.
2nC Qgd 0.
3nC ID 4.
8A Typ.
@ VGS = 4.
5V, TA = +25°C Description This 2nd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer.
It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area.
Applications  DC-DC converters  Battery management  Load switches Features  LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 18mΩ to Minimize On-State Losses Qg = 3.
2nC for U...


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