BCX70H

BCX70 SERIES SURFACE MOUNT NPN SILICON TRANSISTOR SOT-23 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX70 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODES: BCX70G: AG BCX70H: AH BCX70J: AJ BCX70K: AK MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IBM PD TJ, Tstg ΘJA 45 45 5.0 100 200 200 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(ON) fT Cc Ce NF VCB=45V VCB=45V, TA=150°C VEB=4.0V IC=10μA IC=10mA IE=1.0μA IC=10mA, IB=250μA IC=50mA, IB=1.25mA IC=10mA, IB=250μA IC=50mA, IB=1.25mA VCE=5.0V, IC=2.0mA VCE=5.0V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=200μA, RS=2.0kΩ, f=1.0kHz, BW=200Hz 45 45 5.0 0.05 0.10 0.60 0.70 0.55 100 250 1.7 11 MAX 20 20 20 0.35 0.55 0.85 1.05 0.75 6.0 BCX70G BCX70H BCX70J MIN MAX MIN MAX MIN MAX hFE VCE=5.0V, IC=10μA 40 30 hFE VCE=5.0V, IC=2.0mA 120 220 180 310 250 460 hFE VCE=1.0V, IC=50mA 50 70 90 UNITS V V V mA mA mA mW °C °C/W UN...