BCY78, VII, VIII, IX, X BCY79, VII, VIII, IX, X
SILICON PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTIO...
BCY78, VII, VIII, IX, X BCY79, VII, VIII, IX, X
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BCY78 and BCY79 series types are silicon
PNP epitaxial planar
transistors, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC ICM IBM PD PD TJ, Tstg JA JC
BCY78 32
BCY79 45
32 45
5.0
100
200
200
340
1.0
-65 to +200
450
150
UNITS V V V mA mA mA
mW W °C °C/W °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICBO
VCB=Rated VCBO, TA=150°C
IEBO
VEB=5.0V
BVCBO
IC=10μA (BCY78)
32
BVCBO
IC=10μA (BCY79)
45
BVCEO
IC=2.0mA (BCY78)
32
BVCEO
IC=2.0mA (BCY79)
45
BVEBO
IE=1.0μA
5.0
VCE(SAT) IC=10mA, IB=250μA
VCE(SAT) IC=100mA, IB=2.5mA
VBE(SAT) IC=10mA, IB=250μA
0.60
VBE(SAT) IC=100mA, IB=2.5mA
0.70
VBE(ON)
VCE=5.0V, IC=2.0mA
0.60
MAX 15 10 20
0.25 0.80 0.85 1.20 0.75
BCY78-VII BCY78-VIII BCY78-IX
BCY79-VII BCY79-VIII BCY79-IX
MIN TYP MAX MIN MAX MIN MAX
hFE VCE=5.0V, IC=10μA
- 140 -
30 -
40 -
hFE ...