Document
BCW65 SERIES BCW66 SERIES
SURFACE MOUNT NPN SILICON TRANSISTOR
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DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 series devices are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC ICM IB IBM PD TJ, Tstg ΘJA
BCW65
BCW66
60 75
32 45
5.0
800
1.0
100
200
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
ICBO ICBO IEBO BVCBO BVCBO BVCEO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) fT Cc Ce
VCB=Rated VCEO VCB= Rated VCEO, TA=150°C VEB=4.0V IC=10μA (BCW65) IC=10μA (BCW66) IC=10mA (BCW65) IC=10mA (BCW66) IE=10μA IC=100mA, IB=10mA IC=500mA, IB=50mA IC=100mA, IB=10mA IC=500mA, IB=50mA VCE=5.0V, IC=50mA, f=20MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz
60 75 32 45 5.0
170 8.0 50
MAX 20 20 20
0.3 0.7 1.25 2.0
BCW65A
BCW65B
BCW66F
BCW66G
MIN MAX
MIN MAX
hFE VCE=10V, IC=100μA
35
50
hFE VCE=1.0V, IC=10mA
75
110
hFE
VCE=1.0V, IC=100mA
100 250
160 400
hFE
VCE=2.0V, IC=500mA
35
60
UNITS V V V mA A mA mA
mW °C °C/W
UNITS nA μA nA V V V V V V V V V MHz pF pF
BCW65C BCW66H MIN MAX 80 180 250 630 100
R3 (25-January 2016)
BCW65 SERIES BCW66 SERIES SURFACE MOUNT NPN SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
21 3
LEAD CODE: 1) Base 2) Emitter 3) Collector
DEVICE BCW65A BCW65B BCW65C BCW66F BCW66G BCW66H
MARKING CODE EA EB EC EF EG EH
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R3 (25-January 2016)
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