2N4400 2N4401
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N440...
2N4400 2N4401
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4400 and 2N4401 are silicon
NPN transistors designed for general purpose amplifier and switching applications.
PNP complementary types are 2N4402 and 2N4403.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg
60 40 6.0 600 625 -65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS
ICEV
VCE=35V, VEB=0.4V
BVCBO
IC=0.1mA
BVCEO
IC=1.0mA
BVEBO
IE=0.1mA
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=150mA, IB=15mA
VBE(SAT) IC=500mA, IB=50mA
hFE VCE=1.0V, IC=0.1mA
hFE VCE=1.0V, IC=1.0mA
hFE VCE=1.0V, IC=10mA
hFE VCE=1.0V, IC=150mA
hFE VCE=2.0V, IC=500mA
hfe VCE=10V, IC=1.0mA, f=1.0kHz
fT VCE=10V, IC=20mA, f=100MHz
Cob VCB=5.0V, IE=0, f=100kHz
Cib VBE=0.5V, IC=0, f=100kHz
ton VCC=30V, VEB(OFF)=2.0V, IC=150mA,
IB1=15mA
toff VCC=30V, IC=150mA, IB1=IB2=15mA
2N4400 MIN MAX
- 100 60 40 6.0 - 0.40 - 0.75 0.75 0.95 - 1.2 -20 40 50 150 20 20 250 200 - 6.5 - 30
- 35 - 255
2N4401 MIN MAX
- 100 60 40 6.0 - 0.40 - 0.75 0.75 0.95 - 1.2 20 40 80 100 300 40 40 500 250 - 6.5 - 30
- 35 - 255
UNITS V V V mA
mW °C
UNITS nA V V V V V V V
MHz pF pF
ns ns
R2 (2-December 2014)
2N4400 2N4401 SILICON
NPN TRANSISTORS
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