2N4123 2N4124 NPN 2N4125 2N4126 PNP
COMPLEMENTARY SILICON TRANSISTORS
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DESCRIPTION:...
2N4123 2N4124
NPN 2N4125 2N4126
PNP
COMPLEMENTARY SILICON
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4123 series devices are complementary silicon small signal
transistors manufactured by the epitaxial planar process designed for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 2N4123 2N4124 2N4125 2N4126
Collector-Base Voltage
VCBO 40 30 30 25
Collector-Emitter Voltage
VCEO 30 25 30 25
Emitter-Base Voltage
VEBO 5.0 5.0 4.0 4.0
Continuous Collector Current
IC 200
Power Dissipation
PD 625
Power Dissipation (TC=25°C)
PD 1.5
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
Thermal Resistance
JA 200
Thermal Resistance
JC
83.3
UNITS V V V mA
mW W °C °C/W °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C) 2N4123
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=20V
- 50
IEBO
VEB=3.0V
- 50
BVCBO IC=10μA
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