2N3963 2N3964
SILICON PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N396...
2N3963 2N3964
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3963 and 2N3964 are silicon
PNP transistors designed for general purpose applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (TC=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC PD PD TJ, Tstg ΘJC
ΘJA
2N3963 80
2N3964 45
80 45
6.0
200
1.2
360
-65 to +200
146
486
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3963
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=70V
- 10
ICBO
VCB=40V
--
ICES
VCE=70V
- 10
ICES
VCE=40V
--
IEBO
VEB=4.0V
- 10
BVCBO
IC=10μA
80 -
BVCES
IC=10μA
80 -
BVCEO
IC=5.0mA
80 -
BVEBO
IE=10μA
6.0 -
VCE(SAT) IC=10mA, IB=0.5mA
- 0.25
VCE(SAT) IC=50mA, IB=5.0mA
- 0.40
VBE(SAT) IC=10mA, IB=0.5mA
- 0.90
VBE(SAT) IC=50mA, IB=5.0mA
- 0.95
hFE VCE=5.0V, IC=1.0μA
60 -
hFE VCE=5.0V, IC=10μA
100 300
hFE
VCE=5.0V, IC=10μA, TA=-55°C
40 -
hFE VCE=5.0V, IC=100μA
100 -
hFE VCE=5.0V, IC=1.0mA
100 450
hFE
VCE=5.0V, IC=1.0mA, TA=100°C
- 600
hFE VCE=5.0V, IC=10mA
100 -
hFE VCE=5.0V, IC=50mA
90 -
hFE
VCE=5.0V, IC=50mA, TA=-55°C
45 -
2N3964 MIN MAX
-- 10 -- 10 - 10 45 45 45 6.0 - 0.25 - 0.40 - 0.90 - 0.95 180 250 500 100 250 250 600 - 800 200 180 90 -
UNITS V V V mA W...