RB425D

RoHS RB425D SOT-23-3L RB425D Schottky barrier Diodes FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability Marking: D3L ICMaximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter NPeak reverse voltage ODC reverse voltage Mean rectifying current RPeak forward surge current TJunction temperature CStorage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 40 40 100 1 125 -40~+125 ELEElectrical Ratings @TA=25℃ JParameter WEForward voltage Symbol Min. Typ. Max. Unit VF1 0.55 V VF2 0.34 V 1. 9 0. 95¡ À0. 025 1. 02 0. 35 2. 92¡ À0. 05 - D+ + T2. 80¡ À0. 05 CO.,L1.60¡À0.05 Unit V V mA A ℃ ℃ Conditions IF=100mA IF=10mA Reverse current IR 30 µA VR=10V Capacitance between terminals CT 6 pF VR=10V, f=1MHZ WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] ...