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MBR20L100CT

Taiwan Semiconductor

Dual Common Cathode Schottky Rectifier

MBR20L100CT thru MBR20L120CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low pow...


Taiwan Semiconductor

MBR20L100CT

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Description
MBR20L100CT thru MBR20L120CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.9 g (approximately) TO-220AB MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBR20L100CT MBR20L120CT Maximum repetitive peak reverse voltage VRRM 100 120 Maximum RMS voltage Maximum DC blocking voltage VRMS VDC 70 100 84 120 Maximum average forward rectified current IF(AV) 20 Peak repetitive forward current (Rated VR, Square Wave, 20KHz) IFRM 20 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 Peak repetitive reverse surge current (Note 1) Maximum instantaneous forward voltage (Note 2) IF= 10A, TJ=25℃ IF= 10A, TJ=125℃ IF= 20A, TJ=25℃ IF= 20A, TJ=125℃ Maximum reverse current @ rated VR TJ=...




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