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MBR20100CT-Y Dataheets PDF



Part Number MBR20100CT-Y
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Dual Common Cathode Schottky Rectifier
Datasheet MBR20100CT-Y DatasheetMBR20100CT-Y Datasheet (PDF)

MBR2035CT-Y thru MBR20200CT-Y Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compoun.

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MBR2035CT-Y thru MBR20200CT-Y Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) TO-220AB Terminal: Matte tin plated leads, solderable per JESD22-B106 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.88 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) MBR MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL 2035 2045 2050 2060 2090 20100 20150 20200 CT-Y CT-Y CT-Y CT-Y CT-Y CT-Y CT-Y CT-Y UNIT Marking code MBR 2035 CT MBR 2045 CT MBR 2050 CT MBR 2060 CT MBR 2090 CT MBR 20100 CT MBR 20150 CT MBR 20200 CT Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak repetitive forward current (Rated VR, Square wave, 20KHz) VRRM 35 45 50 60 90 100 150 200 V VRMS 24 31 35 42 63 70 105 140 V VDC 35 45 50 60 90 100 150 200 V IF(AV) 20 A IFRM 20 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Peak repetitive reverse surge current (Note 1) Maximum instantaneous forward voltage (Note 2) IF=10A, TJ=25℃ IF=10A, TJ=125℃ IF=20A, TJ=25℃ IF=20A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle IRRM VF IR dV/dt RθJC TJ TSTG 1 0.5 A - 0.80 0.85 0.99 0.57 0.70 0.75 0.87 V 0.84 0.95 0.95 1.23 0.72 0.85 0.85 1.10 0.1 mA 15 10 5 0.15 10000 V/μs 1.0 2.0 - 55 to +150 - 55 to +150 OC/W OC OC Document Number: DS_D1405043 Version:A14 MBR2035CT-Y thru MBR20200CT-Y Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE GREEN COMPOUND PACKAGE MBR20xxCT-Y (Note 1) C0 CODE Suffix "G" TO-220AB Note 1: "xx" defines voltage from 35V (MBR2035CT-Y) to 200V (MBR20200CT-Y) PACKING 50 / Tube EXAMPLE PREFERRED P/N MBR2060CT-Y C0 MBR2060CT-Y C0G PART NO. MBR2060CT-Y MBR2060CT-Y PACKING CODE C0 C0 GREEN COMPOUND CODE G DESCRIPTION Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) AVERAGE FORWARD A CURRENT (A) FIG.1- FORWARD CURRENT DERATING CURVE 24 20 16 12 8 RESISTIVE OR 4 INDUCTIVELOAD WITH HEATSINK 0 0 50 100 CASE TEMPERATURE (oC) 150 FIG. 3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG 100 PEAK FORWARD SURGE CURRENT (A) 150 125 100 75 50 25 0 1 FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 8.3ms Single Half Si.


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