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M6060P Dataheets PDF



Part Number M6060P
Manufacturers Vishay
Logo Vishay
Description Dual Common-Cathode Schottky Rectifier
Datasheet M6060P DatasheetM6060P Datasheet (PDF)

www.vishay.com M6035P, M6045P, M6060P Vishay General Semiconductor Dual Common Cathode Schottky Rectifier 3 2 1 TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2 x 30 A 35 V, 45 V, 60 V 350 A VF at IF = 30 A 0.50 V, 0.56 V TJ max. 150 °C Package TO-247AD Diode variations Common cathode FEATURES • Power pack • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability • High .

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www.vishay.com M6035P, M6045P, M6060P Vishay General Semiconductor Dual Common Cathode Schottky Rectifier 3 2 1 TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2 x 30 A 35 V, 45 V, 60 V 350 A VF at IF = 30 A 0.50 V, 0.56 V TJ max. 150 °C Package TO-247AD Diode variations Common cathode FEATURES • Power pack • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max.10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. MECHANICAL DATA Case: TO-247AD (TO-3P) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current at (fig.1) total device per diode VRRM IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM Peak repetitive reverse current at tp = 2 μs, 1 kHz per diode IRRM Voltage rate of change (rated VR) dV/dt Operating junction and storage temperature range TJ, TSTG M6035P 35 M6045P 45 60 30 M6060P 60 350 2.0 10 000 -65 to +150 UNIT V A A A V/μs °C Revision: 17-Aug-15 1 Document Number: 88980 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com M6035P, M6045P, M6060P Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS M6035P M6045P TYP. MAX. Instantaneous forward voltage per diode VF (1) Reverse current per diode Typical junction capacitance IR (2) CJ IF = 10 A IF = 20 A TJ = 25 °C IF = 30 A IF = 10 A IF = 20 A TJ = 125 °C IF = 30 A VR TJ = 25 °C TJ = 125 °C 4.0 V, 1 MHz 0.42 0.49 0.54 0.31 0.42 0.50 135 110 1150 0.60 0.55 600 160 - Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms M6060P TYP. MAX. 0.43 - 0.52 - 0.59 0.64 0.33 - 0.47 - 0.56 0.60 240 600 140 160 1090 - UNIT V μA mA pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL M6035P M6045P Typical thermal resistance per diode RJC 2.0 M6060P UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) M6045P-E3/45 6.14 M6060P-E3/45 6.14 PREFERRED PACKAGE CODE 45 45 BASE QUANTITY 30/tube 30/tube DELIVERY MODE Tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Current (A) Average Power Loss (W) 70 Resistive or Inductive Load 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 Case Temperature (°C) Fig. 1 - Forward Current Derating Curve 16 M6035P & M6045P 14 D = 0.5 12 D = 0.3 D = 0.8 10 D = 0.2 8 D = 0.1 6 4 D = 1.0 T 2 D = tp/T tp 0 0 5 10 15 20 25 30 35 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 17-Aug-15 2 Document Number: 88980 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com M6035P, M6045P, M6060P Vishay General Semiconductor Average Power Loss (W) 16 14 M6060P D = 0.8 D = 0.5 12 D = 0.3 10 D = 0.2 D = 1.0 8 D = 0.1 6 4 T 2 D = tp/T tp 0 0 5 10 15 20 25 30 35 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Per Diode 400 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 300 Peak Forward Surge Current (A) 200 100 1 10 Number of Cycles at 60 Hz 100 Fig. 4 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode 100 TJ = 150 °C 10 TJ = 125 °C Instantaneous Forward Current (A) TJ = 25 °C 1 M6035P, M6045P 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Instantaneous Forward Voltage (V) Fig. 5 - Typical Instantaneous Forward Characteristics Per Diode Instantaneous Forward Current (A) 100 TJ = 150 °C TJ = 125 °C 10 1 TJ = 25 °C M6060P 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Instantaneous Forward Voltage (V) Fig. 6 - Typical Instantaneous Forward Characteristics Per Diode Instantaneous Reverse Current (mA.


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