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M6035P, M6045P, M6060P
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
3 2 1
TO-247AD (TO-3P)
PIN 1 PIN 3
PIN 2 CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
2 x 30 A 35 V, 45 V, 60 V
350 A
VF at IF = 30 A
0.50 V, 0.56 V
TJ max.
150 °C
Package
TO-247AD
Diode variations
Common cathode
FEATURES • Power pack • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max.10 s, per JESD 22-B106 • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application.
MECHANICAL DATA Case: TO-247AD (TO-3P) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage Maximum average forward rectified current at (fig.1)
total device per diode
VRRM IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
IFSM
Peak repetitive reverse current at tp = 2 μs, 1 kHz per diode
IRRM
Voltage rate of change (rated VR)
dV/dt
Operating junction and storage temperature range
TJ, TSTG
M6035P 35
M6045P 45 60 30
M6060P 60
350
2.0 10 000 -65 to +150
UNIT V
A
A A V/μs °C
Revision: 17-Aug-15
1 Document Number: 88980
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
M6035P, M6045P, M6060P
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL TEST CONDITIONS
M6035P M6045P
TYP.
MAX.
Instantaneous forward voltage per diode VF (1)
Reverse current per diode Typical junction capacitance
IR (2) CJ
IF = 10 A
IF = 20 A TJ = 25 °C
IF = 30 A
IF = 10 A
IF = 20 A TJ = 125 °C
IF = 30 A
VR
TJ = 25 °C TJ = 125 °C
4.0 V, 1 MHz
0.42 0.49 0.54 0.31 0.42 0.50 135 110 1150
0.60 0.55 600 160 -
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms
M6060P
TYP.
MAX.
0.43 -
0.52 -
0.59 0.64
0.33 -
0.47 -
0.56 0.60
240 600
140 160
1090
-
UNIT
V
μA mA pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M6035P
M6045P
Typical thermal resistance per diode
RJC
2.0
M6060P
UNIT °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
M6045P-E3/45
6.14
M6060P-E3/45
6.14
PREFERRED PACKAGE CODE 45 45
BASE QUANTITY 30/tube 30/tube
DELIVERY MODE Tube Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Average Forward Current (A) Average Power Loss (W)
70 Resistive or Inductive Load
60
50
40
30
20
10
0 0 25 50 75 100 125 150 175 Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
16 M6035P & M6045P
14 D = 0.5
12 D = 0.3
D = 0.8
10 D = 0.2
8 D = 0.1
6
4
D = 1.0 T
2
D = tp/T
tp
0 0 5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 17-Aug-15
2 Document Number: 88980
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
M6035P, M6045P, M6060P
Vishay General Semiconductor
Average Power Loss (W)
16 14 M6060P
D = 0.8 D = 0.5
12 D = 0.3 10 D = 0.2
D = 1.0
8 D = 0.1
6
4
T
2
D = tp/T
tp
0 0 5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics Per Diode
400 TJ = TJ Max. 8.3 ms Single Half Sine-Wave
300
Peak Forward Surge Current (A)
200
100 1
10 Number of Cycles at 60 Hz
100
Fig. 4 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode
100 TJ = 150 °C
10 TJ = 125 °C
Instantaneous Forward Current (A)
TJ = 25 °C 1
M6035P, M6045P
0.1 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Instantaneous Forward Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics Per Diode
Instantaneous Forward Current (A)
100 TJ = 150 °C
TJ = 125 °C 10
1 TJ = 25 °C
M6060P
0.1 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Instantaneous Forward Voltage (V)
Fig. 6 - Typical Instantaneous Forward Characteristics Per Diode
Instantaneous Reverse Current (mA.