N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
SSG4390N
1.9A, 150V, RDS(ON) 625m N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product...
Description
Elektronische Bauelemente
SSG4390N
1.9A, 150V, RDS(ON) 625m N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8 saves board space.
Fast switching speed. High performance trench technology.
APPLICATION
DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
LeaderSize 13’ inch
SOP-8
B
A HG
LD M
C
JK F
N E
REF.
A B C D E F G
Millimeter
Min. Max.
5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25
1.27 TYP.
REF.
H J K L M N
Millimeter
Min. Max.
0.35 0.49 0.375 REF.
45° 1.35 1.75 0.10 0.25
0.25 REF.
SD SD SD GD
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
TA = 25°C TA = 70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Total Power Dissipation 1
TA = 25°C TA = 70°C
Operating Junction & Storage Temperature Range
Symbol
VDS VGS
ID
IDM IS
PD
TJ, TSTG
Rating
150
±20
1.9 1.5 10 3.6 3.1 2.2 -55 ~ 150
THERMAL RESISTANCE RATINGS
Maximum Junction ...
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