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SSG4390N

SeCoS

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente SSG4390N 1.9A, 150V, RDS(ON) 625m N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product...


SeCoS

SSG4390N

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Description
Elektronische Bauelemente SSG4390N 1.9A, 150V, RDS(ON) 625m N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SOP-8 saves board space.  Fast switching speed.  High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ SOP-8 2.5K LeaderSize 13’ inch SOP-8 B A HG LD M C JK F N E REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. SD SD SD GD ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 TA = 25°C TA = 70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Rating 150 ±20 1.9 1.5 10 3.6 3.1 2.2 -55 ~ 150 THERMAL RESISTANCE RATINGS Maximum Junction ...




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