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LL41 Dataheets PDF



Part Number LL41
Manufacturers Vishay
Logo Vishay
Description Small Signal Schottky Diode
Datasheet LL41 DatasheetLL41 Datasheet (PDF)

www.vishay.com LL41 Vishay Semiconductors Small Signal Schottky Diode MECHANICAL DATA Case: MiniMELF SOD-80 Weight: approx. 31 mg Cathode band color: black Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/2.5K per 7" reel (8 mm tape), 12.5K/box FEATURES • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage • This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges .

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www.vishay.com LL41 Vishay Semiconductors Small Signal Schottky Diode MECHANICAL DATA Case: MiniMELF SOD-80 Weight: approx. 31 mg Cathode band color: black Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/2.5K per 7" reel (8 mm tape), 12.5K/box FEATURES • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage • This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges • This diode is also available in the DO-35 case with type designation BAT41 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PARTS TABLE PART LL41 ORDERING CODE LL41-GS18 or LL41-GS08 INTERNAL CONSTRUCTION Single diode REMARKS Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Repetitive peak reverse voltage Forward continuous current (1) Repetitive peak forward current (1) Surge forward current (1) Power dissipation (1) tp < 1 s,  < 0.5 tp = 10 ms Tamb = 65 °C VRRM IF IFRM IFSM Ptot Note (1) Valid provided that electrodes are kept at ambient temperature VALUE 100 100 350 750 200 UNIT V mA mA mA mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Thermal resistance junction to ambient air Junction temperature RthJA Tj Ambient operating temperature range Storage temperature range Tamb Tstg Note (1) Valid provided that electrodes are kept at ambient temperature VALUE 300 (1) 125 - 65 to + 125 - 65 to + 150 UNIT K/W °C °C °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Reserve breakdown voltage (1) IR = 100 μA V(BR) 100 Leakage current (1) VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 100 °C IR IR Forward voltage (1) IF = 1 mA IF = 200 mA VF VF Diode capacitance VR = 1 V, f = 1 MHz CD Note (1) Pulse test, tp = 300 μs TYP. 110 400 2 MAX. 100 20 450 1000 UNIT V nA μA mV mV pF Rev. 1.7, 09-May-12 1 Document Number: 85671 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com LL41 Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 250 Ptot- Power Dissipation (mW) 200 150 100 50 0 0 50 100 150 20225 Tamb - Ambient Temperature (°C) Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature 5.0 4.5 CD - Diode Capacitance (pF) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 20227 0 0 5 10 15 20 25 30 35 40 VR - Reverse Voltage (V) Fig. 4 - Typical Capacitance vs. Reverse Voltage 100000 10000 1000 100 10 Tj = 125 °C 100 °C 75 °C 50 °C 25 °C IR - Reverse Leakage Current (nA) 20226 1 0 10 20 .


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