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LL41
Vishay Semiconductors
Small Signal Schottky Diode
MECHANICAL DATA Case: MiniMELF SOD-80 Weight: approx. 31 mg Cathode band color: black Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• For general purpose applications
• This diode features low turn-on voltage and high breakdown voltage
• This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges
• This diode is also available in the DO-35 case with type designation BAT41
• AEC-Q101 qualified
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
PARTS TABLE
PART LL41
ORDERING CODE LL41-GS18 or LL41-GS08
INTERNAL CONSTRUCTION Single diode
REMARKS Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Repetitive peak reverse voltage Forward continuous current (1) Repetitive peak forward current (1) Surge forward current (1) Power dissipation (1)
tp < 1 s, < 0.5 tp = 10 ms
Tamb = 65 °C
VRRM IF
IFRM IFSM Ptot
Note (1) Valid provided that electrodes are kept at ambient temperature
VALUE 100 100 350 750 200
UNIT V mA mA mA
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air Junction temperature
RthJA Tj
Ambient operating temperature range Storage temperature range
Tamb Tstg
Note (1) Valid provided that electrodes are kept at ambient temperature
VALUE 300 (1)
125 - 65 to + 125 - 65 to + 150
UNIT K/W °C °C °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Reserve breakdown voltage (1)
IR = 100 μA
V(BR)
100
Leakage current (1)
VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 100 °C
IR IR
Forward voltage (1)
IF = 1 mA IF = 200 mA
VF VF
Diode capacitance
VR = 1 V, f = 1 MHz
CD
Note (1) Pulse test, tp = 300 μs
TYP. 110
400 2
MAX.
100 20 450 1000
UNIT V nA μA mV mV pF
Rev. 1.7, 09-May-12
1 Document Number: 85671
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
LL41
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
250
Ptot- Power Dissipation (mW)
200
150
100
50
0 0 50 100 150
20225
Tamb - Ambient Temperature (°C)
Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature
5.0 4.5
CD - Diode Capacitance (pF)
4.0 3.5
3.0 2.5
2.0 1.5
1.0 0.5
20227
0 0
5 10 15 20 25 30 35 40 VR - Reverse Voltage (V)
Fig. 4 - Typical Capacitance vs. Reverse Voltage
100000 10000 1000 100 10
Tj = 125 °C 100 °C 75 °C
50 °C
25 °C
IR - Reverse Leakage Current (nA)
20226
1 0 10 20 .