V10D202C

www.vishay.com V10D202C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V10D202C Anode 1 K Anode 2 Cathode ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. Package 2 x 5.0 A 200 V 100 A 0.67 V 175 °C SMPD (TO-263AC) Circuit configuration Common cathode FEATURES Trench MOS Schottky technology generation 2 Available Very low profile - typical height of 1.7 mm Ideal for automated placement Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (X_denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER ...