TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V/ 400 mW
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
Temperature-Compensated Zener Reference Diodes
Temperature-compensated zener ref...
Description
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
Temperature-Compensated Zener Reference Diodes
Temperature-compensated zener reference diodes utilizing a single chip oxide passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed structure. Mechanical Characteristics: CASE: Hermetically sealed, all-glass DIMENSIONS: See outline drawing. FINISH: All external surfaces are corrosion resistant and leads are readily solderable. POLARITY: Cathode indicated by polarity band. WEIGHT: 0.2 Gram (approx.) MOUNTING POSITION: Any Maximum Ratings Junction Temperature: – 55 to +175°C Storage Temperature: – 65 to +175°C DC Power Dissipation: 400 mW @ TA = 50°C WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Phoenix, Arizona
1N821,A 1N823,A 1N825,A 1N827,A 1N829,A
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW
CASE 299 DO-204AH GLASS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. VZ = 6.2 V ± 5%* @ IZT = 7.5 mA) (Note 5)
Maximum Voltage Change ∆VZ (Volts) (Note 1) Ambient Test Temperature °C ±1°C Temperature Coefficient For Reference Only %/°C (Note 1) Maximum Dynamic Impedance ZZT Ohms (Note 2)
JEDEC Type No.
1N821 1N823 1N825
1N827 1N829
0.096 0.048 0.019
0.009 0.005
– 55, 0, +25, +75, +100
0.01 0.005 0.002
0.001 0.0005
15
1N821A 1N823A 1N825A
1N827A 1N829A
0.096 0.048 0.019
0.009 0.005
0.01 0.005 0.002
0.001 0.0005
10
*Tighter-tolerance units available on special request.
Motorola TVS/Zener De...
Similar Datasheet